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Alternatives for IGBTs

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BEC Distribution has announced the availability of high-quality Alternatives for STMicroelectronics and onsemi IGBT Transistors. They are available on a 4-6 weeks lead time with free samples provided on request. BEC’s Insulated Gate Bipolar Transistors (IGBTs) provide maximum reliability combined with high-voltage, high-current characteristics. They feature a low saturation voltage and a high current capability combined with controlled junction temperatures ...

SiC half-bridge handles 1.8MW in under 500ns

Infineon XHP2 package with AlSiC baseplate

Aiming at vehicle traction, Infineon has put a pair of 3,300V 1,000A 1.9 mΩ silicon carbide trench mosfets into its 100 x 140 x 40mm ‘XHP 2’ module housing, calling the module FF2000UXTR33T2M1. This package is rated for 6kV testing, and achieves 2.6kV partial discharge extinction. Creepage is 40mm terminal to baseplate and 34mm between terminals. Clearance is 31 and ...

30V TO-220 mosfets from Infineon

Infineon TO220 StrongIRFET 2 mosfet

Infineon has announced seven 30V mosfets in TO-220 packaging. They are part of its StrongIRfet 2 family, which are less qualified that its industrially-rated Optimos devices. “The new power mosfets were designed to meet the requirements of mass market applications – switched-mode power supplies, motor drives, battery management systems and uninterruptible power supplies,” it said. Resistance and gate charge improvements ...

Small-signal mosfets in 1.1x1mm and 1.4×1.2mm DFN packaging

Nexperia DFN1110D-3 DFN1412-6

Nexperia has put more single and dual small-signal mosfets into DFN1110D-3 (SOT8015) and DFN1412-6 (SOT1268) packages, with side-wettable flanks for automated optical inspection. “The 1.1 x 1mm DFN1110D-3 package has seen increasingly wide adoption, and is quickly becoming the de-facto industry standard package for small-signal mosfets and bipolar transistors intended for use in automotive applications,” according to the company. “Superior ...

Magnachip adds four 40V MOSFETS for auto

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Magnachip has come up with four new 40V MXT MV MOSFETs designed in PDFN 33 packages for automotive applications. PDFN33 packages reduce footprint by more than 60% and the weight by approximately 75% compared to PDFN56. Three of the devices – AMDV040N029LVRH, AMDV040N036LVRH, and AMDV040N042LVRH – have a gate threshold voltage of 1.8V. Magnachip’s New Automotive 40V MXT MV MOSFETs The key ...

Protection diode for OPEN Alliance 100Base-T1 and 1000Base-T1

Vishay Ethernet ESD diodes

VETH100A1DD1 is a bidirectional ESD protection diode for automotive Ethernet, compliant with OPEN Alliance 100Base-T1 and 1000Base-T1. Made by Vishay, it comes in a wettable flank DFN1006-2B package  measuring 1 x 0.6 x 0.45mm. Working range is ±24V, and clamping is typically at 31V for 1A, “a result of its snap-back technology with a trigger voltage >100V”, said the company. ...

3A bipolar transistors in 2x2mm DFN2020D-3 package

Nexperia DFN2020D-3 package

Nexperia has announced 20 bipolar power transistors in 2 x 2mm DFN2020D-3 packaging, half of them automotive-qualified. The span 50 and 80V ratings, 1 to 3A currents and both npn and pnp polarities. “DFN2020D-3 packaged devices deliver an 80% reduction in board space when compared to SOT89, and a 90% reduction compared to SOT223,” according to the company. “The package ...

112 x 62mm IGBT module for 1kV flying capacitor boost converters

Onsemi NXH500B100H7F5SHG IGBT boost module

Onsemi has announced a 112 x 62mm power module for flying capacitor boost converters up to 1kV. It combines 1kV silicon IGBTs and 1.2kV silicon carbide diodes in the company’s F5BP package. Called NXH500B100H7F5SHG, it can handle continuous collector currents up to 210A (630A pulsed) (Tj = 175°C). Abs max power dissipation is 305W. To reducing stray inductance and thermal ...

≤100V mosfets in 5 x 6mm LFPAK

AOS LFPAK

Alpha and Omega has turned to 5 x 6mm LFPAK surface-mount packaging for a family of mosfets aimed at industrial, server power, solar, and telecommunication applications. Available at 40V, 60V, and 100V (see table) “AOS’s LFPAK enables higher board-level reliability due to gull-wing leads, which offer a ruggedised solution for board-level environmental stresses”, according to the company. “Gull-wing leads also ...

62mm SiC mosfet and Schottky half-bridges

SemiQ 62mm SiC Schottky half bridge

SemiQ has put 1,200V silicon carbide mosfet and Schottky diode half-bridges into standard ’62mm’ industrial power modules. There are four parts, each measuring 62 x 106.5 x 17mm (plus terminals): two mosfet hald-bridges and two Schottky half-bridges, aimed at new designs as well as efficiency-boosting replacements in legacy systems. 1.2kV 62mm power modules  Configuration Current Rds(on) GCMX003A120S7B1 SiC mosfet half-bridge ...