Discretes

Navitas Semiconductor has made fast versions of its Gen-3 650 and 1,200V silicon carbide mosfets, branded ‘G3F’ and available in packages including D2PAK-7 to TO-247-4. “We’re pushing the boundaries of SiC, with up to 600kHz switching speeds said company v-p of technology Sid Sundaresan. One proposed application is in continuous-conduction-mode totem-pole power factor correction (CCM TPPFC) circuits up to 10kW in ...

Infineon has announced a flurry of new power products as a prelude to PCIM in Nuremberg next week, the latest of which is a family of 600V super-junction mosfets. Its eighth generation, “the devices combine the best features of the 600V CoolMOS 7 series and are the successors to the P7, PFD7, C7, CFD7, G7 and S7 product families”, according ...

Infineon has announced bi-directional GaN power transistors at 40, 650 and 850V, and a current sensing GaN transistor. There are two types of bi-directional transistor: The 650 and 850V devices are both normally-off monolithic gate-injection transistors with four operational modes via two separate gates and a substrate terminal, to deliver what the company calls ‘independent isolated control’. “They utilize the ...

Infineon is putting 650V silicon carbide mosfet die into two packages with SO-type footprints: a thin (1.5mm) bottom-cooled 8 x 8mm leadless TO (TOLL – TO leadless), and 9.8 x 15 x 2.3mm 16 leg SO version with top-side cooling (‘TOLT’ package) (see photo). Die with typical on-resistances of 20, 40, 50 or 60mΩ are available in either package, and ...

Alpha and Omega Semiconductor has designed an asymmetrical half-bridge mosfet pair in a 3.5 x 5mm DFN package for high-current dc-dc converters. Rated at 30V, AONG36322 has a 83A <4.5mΩ high-side transistor and a 163mA <1.3mΩ low-side transistor with 10V gate drive. On-resistances rise to <8mΩ and <1.75mΩ respectively with 4.5V gate drive. “AONG36322 [is] ideal for a new generation ...

SemiQ will unveil 1,200V silicon carbide half-bridges packaged in S3 modules at PCIM next month. The industry-standard package is 62mm long and 26.3mm high. So far, only the part numbers and basic specs have been revealed: GCMX003A120S3B1-N 600A 3mΩ GCMX005A120S3B1-N 400A 4.5mΩ They will be aimed at induction heaters, welding equipment, uninterruptible power supplies photovoltaic inverters, wind inverters, energy storage, ...

Nexperia has put 1,200V silicon carbide mosfet die into D2PAK-7 surface mount package, also known as TO-263-7. “SiC switches in SMD packages like D2PAK-7 [are] becoming increasingly popular in industrial applications including electric vehicle charging, uninterruptible power supplies and inverters for solar and energy storage.” NSF0xx120D7A0 is the SiC mosfet family name, and they come with different on-resistances: NSF030120D7A0 30mΩ ...

Silicon carbide chip company SemiQ has begun a known-good-die screening program for SiC mosfets “that delivers electrically sorted and optically inspected SiC technology ready for back-end processing and direct die attachment”, it said. It covers 1,200V 20 (pictured), 40 or 80mΩ mosfet die (119, 63 or 35A at 25°C respectively). “Our known-good-die SiC mosfets provide performance advantages such as near-constant ...

Alternatives for Murata’ LQH series of fixed inductors are available with short lead times of between five to seven weeks, announced BEC Distribution. The wire wound, surface mount fixed inductors have a high Q value for low resistance and also have a high inductance for filtering high frequency noise. A spokesperson told Electronics Weekly that typical specifications include an operating ...

New Yorker Electronics is aiming at displacing PowerPAK 1212 packaged mosfets by stocking a pair of symmetric 80V n-channel mosfets in a single 3.3 x 3.3mm package from Vishay. Called SiZF4800LDT, the “device provides designers with a space-saving solution for synchronous buck converters, point-of-load converters, and half-bridge and full-bridge power stages,” according to New Yorker. “In these applications, the high ...