Discretes

Power factor correction with CCM (continuous conduction mode) boost converters is where ITG Electronics is aiming its latest choke family. Specifically, the series is for converters operating at between 100 and 200kHz, and up to 3.3kW. There are four parts, from 90 to 285uH, all with a 43 x 35mm footprint and standing 38mm above the PCB. They can operate ...

Nexperia has introduced 80 and 100V mosfets in 5 x 6 and 8 x 8mm footprint LFPAK packaging with Rds(on) ranging from 1.8 to 15mΩ, or 2.07mΩ upwards for the 100V parts. “Many mosfet manufacturers focus on achieving high efficiency through low Qg(total) and low Qgd, when benchmarking the switching performance of their devices against alternative offerings,” said the company. ...

KOA Speer Electronics has brought out a multilayer type metal oxide varistor that handles a surge current of up to 6,000A. The multilayer construction of the NV73S can absorb a large surge despite its small size. The two-way symmetries can absorb positive and negative surges. The NV73S replaces the NV732E (1210) through 2L (2220) due to its improved surge protection. ...

Taiwan Semiconductor has introduced ten AEC-Q101-qualified small-signal mosfets. There are seven n-channel parts (including two duals), and three p-channel parts (one dual) in the ‘TQM’ line – see the table below. Three packages are used: SOT-236, SOT-363 or SOT-323, and they are rated for >2kV ESD withstanding. “In addition to automotive applications, these small-footprint MOSFETs are ideal for high-reliability commercial designs ...

EPC Space has created two surface-mount 40V radiation-specified GaN hemts for space use. EPC7001BSH is a 50A (120A pulse) 11mΩ transistor in 5.7 x 3.9mm packaging EPC7002ASH is a 15A (40A pulse) 28mΩ transistor in 3.4 x 3.4mm packaging “Both devices have a total dose radiation rating greater than 1,000kRad(Si) and SEE immunity for LET of 83.7MeV/mg/cm2 with Vds up ...

Infineon is aiming at 48V automotive applications with AUCN08S7N013, an 80V mosfet in a 5 x 6mm SSO8 that has a maximum on-resistance of 1.3mΩ at 25°C (Tj, 10Vgs, 88A Id). “48V applications including electric power steering, braking systems, power switches in zone architectures, battery management, e-fuse boxes, dc-dc and brushless dc motor drives,” it said. The mosfet is several ...

Shanghai-based WeEn Semiconductors unveiled 650V and 1,200V IGBTs with fast recovery anti-parallel diodes at PCIM in Nuremberg. “Based on fine trench gate field-stop technology, the IGBTs provide a more uniform electric field within the chip, support higher breakdown voltages and offer improved dynamic control,” according to the company. “A positive temperature coefficient simplifies parallel operation.” Ratings are 650V 75A, 1.2kV ...

Qorvo has picked depletion-mode (normally-on) silicon carbide JFET technology to build a 750V 4.3mΩ transistor for circuit breakers, and put it in a 10 x 12mm surface-mount TOLL package. “It was designed for circuit protection applications including solid-state circuit breakers, where low resistance, thermal performance and reliability are paramount,” according to the company. This “JFET can withstand high instantaneous junction ...

EPC is aiming at USB-C PD applications 50V 8.5mΩ GaN transistor with a 1.8mm2 footprint. EPC2057 measures 1.5 x 1.2mm and can handle 9.6A continuously (25°C) and 66A single 300µs pulses (25°C). With such a tiny package, thermals are important. According to the data sheet, junction-to-case thermal resistance is 2.3°C/W, then it is 7°C/W junction-to-board, 72.5°C/W junction to ambient on ...

A new selection of materials has allowed Rohm to add 5W rated current sensing resistors to its 2512 sized (6432 metric) PMR100 series of metal plate shunts, formerly rated at either 2 or 3W only. They are available in 0.5, 1 and 1.5mΩ. “Adopting a proprietary trimless structure suppresses the rise in temperature caused by localised current concentration. This allows ...