Discretes

Toshiba is claiming better improved on-resistance and gate charge for its third generation of industrial 650V enhancement-mode silicon carbide mosfets. The “third generation SiC process optimises the cell structures used in second-generation devices,” according to the company. “As a result, the product of Rds(on) and Qg, that represents both static and dynamic losses, has improved by about 80%”. In common ...

Epson has introduced a ±20ppm (25°C, 12pF) 32.768kHz crystals in 2 x 1.2mm (FC2012AN) packaging. ESR is typically 35kΩ at 25°C. Operation is over -40 to +105°C, with ESR typically 50kΩ max -40 to +85°C in the smaller size, and 60kΩ max -40 to +105°C. Consumption is 319nA in a given situation, compared to 395nA for the company’s earlier FC20-M. ...

Murata has introduced a series of chip ferrite beads with a 20A current rating, aiming them at the battery charging systems and powertrains of electric vehicles, as well as in industrial equipment. Called the BLE32SN series, its members are 3.2 x 2.5 x 2mm (1210 or metric 3225) and operate over -55 to +125°C or -55°C to +150°C. “By leveraging ...

Nexperia is aiming at protecting USB 3.2, HDMI 2.0 and LVDS data lines in vehicles with family of ESD (electrostatic discharge) protection diodes. “Additionally, this portfolio also aims to address the upcoming high-speed video-links as well as the Open Alliance multi-Gbit Ethernet applications”, according to the company. All variants come in 1 x 0.6 x 0.5mm leadless packages to improve ...

Nexperia has introduced 30V and 12V n-channel trench mosfets in 1mm packaging. In 1 x 0.6 x 0.2mm DSN1006: PMCB60XN 30V, 4A, 50mΩ (4.5Vg) PMCB60XNE 30V, 4A, 55mΩ (4.5Vg), 2.5kV HBM ESD protection “This gives them the lowest on-resistance per die area among similar 30V mosfets in the market,” claimed the company. In 0.96 x 0.96 x 0.24mm DSN1006 (SOT8007) ...

EPC Space has announced 100V and 200V rad-hard GaN power transistors for space use “with ultra-low on-resistance and extremely low gate charge for high power density solutions”, according to the company. Judge for yourself, these are the typical values: EPC7007B (200V 18A): 28mΩ 5.4nC EPC7018G (100V 90A): 6mΩ 11.7nC “These additions to our rad-hard product line enable a generation of ...

MagnaChip has produced a 24V MOSFET for wireless earphone batteries which addresses the issue of reducing conduction loss after a quick charge. The core cell density has been increased by 30% compared to the previous version, while the design of the core cell, termination and source pads has been enhanced in order to reduce the *RDS(on) by 24%. As a ...

Rohm has developed its 4th generation 650V fast recovery diodes (FRDs), balancing forward voltage and reverse-recovery time for high-power industrial and consumer equipment including air conditioners and electric vehicle charging stations. RFL series (right) is nominally low forward voltage and reduces Vf by ~3.2% and trr by ~8.3% compared with the existing RFN series. RFS series (right), nominally high-speed, reduces ...

Nexperia has released 20V and 30V mosfets in DFN0603-3 (SOT8013), “the smallest DFN package”, it said. The company already offers ESD protection devices in the 0.63 x 0.33 x 0.25mm package. “Next generation wearable and hearable devices are creating several challenges for product designers,” it said. “Firstly, available board space is at a premium as functionality is added, plus heat ...

Distributor Rutronik is stocking a 100V multi-layer ceramic capacitor (MLCCs) from Samsung Electro-Mechanics. The part, called CL32Y106KCVZNWE, has a capacitance of 10μF and uses an X7S dielectric to get it into a 3.2 x 2.5 x 2.5mm package. Rutronik is promoting it for use on 48V power rails, where companies are switching up from 12V to increase power efficiency. “The ceramic ...