Discretes

Alpha and Omega Semiconductor has released a 1.2kV 65mΩ silicon carbide mosfet, its first on a new technology platform. “After years of development work, we are excited to add this SiC mosfet technology to Alpha and Omega’s existing silicon mosfet and IGBT portfolio, and our 650V GaN platform,” said company director David Sheridan. The SiC transistors have been specifically created ...

Diodes has announced the first in a new generation of discrete mosfets, with two n-channel transistors in a 3.3 x 3.3mm package. Called DMN3012LEG, its transistors are made using an LDMOS (lateral diffused MOS) process, and optimised for buck converters and half-bridges – they are internally connected with Q1 as the high-side switch and Q2 on the low side. The company ...

Toshiba has launched a discrete 1,350V IGBT for voltage resonance power converters in home induction heating appliances – tabletop cookers, rice cookers and microwave ovens, for example. GT20N135SRA has a typical Vce(sat) of 1.60V (20A 25°C ambient) and a diode Vf of 1.75V “As both the IGBT and diode have improved their conduction loss characteristics at 100°C, the device will ...

Following an agreement with Hongfa Europe, Anglia Components is UK and Ireland distributor for its range of electro-mechanical relays. The signing extends the distributor’s range of relay products. Hongfa Europe’s senior sales manager, Greg Ward said the company chose the distributor for its links to customers in the UK. “Anglia is a strategic local partner . . . They excel ...

Following an agreement with Panjit Semiconductor, distributor Anglia now offers discrete semiconductor from Taiwanese company, Panjit International. The agreement applies to the UK and Ireland. Panjit’s portfolio includes MOSFETs, Schottky, SiC Schottky, diode rectifiers, protection devices, bipolar junction transistors and bridge rectifiers for power supplies, industrial and automotive applications. The distributor said that this signing will complement its existing line ...

UnitedSiC has introduced what it claims is industry’s lowest Rds(on) 650V SiC FET in a low-profile DFN 8×8 surface-mount package. Called UF3SC065030D8S, its Rds(on) is 34mΩ, and  UF3SC065040D8S is a cheaper partner device that achieves 45mΩ. “Both SiC FETs have a current rating of 18A (limited by wire count in the package), and a maximum operating temperature of 150°C,” according to ...

Vishay has expanded its range of ‘eSMP’ trench MOS barrier schottky rectifiers, with 16 different 2A or 3A devices – all in a low profile (1mm) SMP (DO-220AA) package – with a 2.2 x 4mm footprint. For part numbers, scroll down to the table. Reverse voltages span 45 to 200V, “while their 3A rating is the industry’s highest for the ...

Diodes has announced its family of quad- and dual-channel 4:1 and 2:1 bus switches are now available in a 3x3x0.65mm package. The package is designed to enable increased PCB density and reduce product dimensions when developing PC notebooks and tablets as well as networking and telecommunications equipment. Discrete logic devices, such as bus multiplexers and demultiplexers, remain a critical element ...

Taiwan Semiconductor has introduced 45V and 60V trench Schottky rectifiers in a TO-277A-compatible SMPC4.6U package, and qualified to AEC-Q101 for the automotive market. The surface-mount package is only 1.1mm high and has wettable flanks for automated optical inspection. The parts are TSUPxM45SH or TSUPxM60SH, depending on whther the current rating is 45A or 60A, and the ‘x’ needs to be replaced with ...

Nexperia has announced its entry into the GaN FET market with the introduction of the 650V GAN063-650WSA, with a gate-source voltage (VGS) of +/-20V and a temperature range of -55 to 175°C. The GAN063-650WSA features a low RDS(on) – down to 60 mΩ – and fast switching for efficiency. The company is targeting applications including xEV, datacentres, telecom infrastructure, industrial ...