Infineon Technologies is to integrate 600 and 700V GaN power hemts alongside gate driver chips inside single packages, in 5 x 6mm or 6 x 8mm SMD packages. IGI70NxxxA2xS is to be a 700V range that combines a single GaN transistor with a single-channel driver in 5 x 6mm PQFN with with 140 to 500mΩ options (IGI70NxxxA2PS), or 6 x ...
Analogue / Linear / Mixed Signal ICs
The latest Electronics Weekly product news on analogue, linear and mixed-signal ICs.
LED drivers for animated effects
Lumissil Microsystems has created a pair of LED drivers that include a 32MHz 8051 microcontroller. “These new controllers enable lighting engineers to create customised dynamic LED lighting animations tailored to their system requirements,” according to the company. “They feature integrated non-volatile memory to store animation sequences and LED parameters, essential for dynamic lighting effects such as colour transitions, pulsing, fading ...
17mΩ 13.5A e-fuses for 12V hot-swap needs
Nexperia has created a pair of 17mΩ 13.5A resettable electronic fuses for 12V hot-swap applications in 3 x 3 x 0.75mm DFN3030-10 (SOT8037-1) packaging. NPS3102A and NPS3102B operate with 9 to 18V on the input (21V abs. max) and can limit output current to anywhere between 2 and 13.5A range, programmed using a resistor – the voltage across which can ...
1,280×1,024 10µm-pitch read-out IC for infra-red imagers
Senseeker has introduced a 1,280 x 1,024 version of its 10µm digital read-out IC (‘droic’) for short-wave infra-red imaging arrays, including quantum dot-based detector types. RD0131 as it will be known has a capacitive transimpedance amplifier (CTIA) front-end. There are three selectable gains, with well capacity of: 22k electrons (high-gain), 160ke- (medium) or 1.1Me- (low). In high gain, room temperature ...
Wurth gets into opto-triacs
Würth Elektronik has created a range of opto-isilated triacs for controlling light AC loads and larger triacs. They are called WL-OCTR, and come in a choice of packages: through hole DIP-4 or DIP-6, or surface-mount SOP-4. Through-hole parts offer 5kV breakdown between input and output, which drops to 3.75kC for surface mount. DIP parts can also be supplied with legs ...
Efabless marks chip manufacturing milestone
At DAC 2024, Efabless celebrated a milestone of 40 commercial companies designed chips using its chipIgnite and Google-sponsored OpenMPW programme. Of these, some are ready for production volumes, the majority are at the prototype/proof of concept stage, said CEO, Michael Wishart. The platform allows start-ups and smaller companies to prototype designs and innovate without having to buy a license, he ...
5v analogue front ends with ΣΔ ADCs and sensor interfacing
Nisshinbo Micro Devices has released a series of industrial 5V analogue front end ICs with high-resolution ΣΔ converters, input multiplexers, programmable gain amplifiers and sensor excitation current sources. NA2202 has 16bit resolution NA2203 has 20bit resolution NA2204 has 24bit resolution “Microcontrollers with 5V operating voltage are still widely used in the industrial equipment market, according to the company. “In order ...
VLSI Symposium: RF ADCs cover 5GHz
At the IEEE VLSI Symposium this week, Imec revealed two ADCs for 5GHz ‘beyond 5G’ communication, one for base stations and one for phones. The base station ADC operates over bands up to 5GHz. It is a 10Gsample/s cmos hierarchical time-interleaved ADC that delivers 9 ENOB (effective number of bits) at low frequencies and 8.2 ENOB at Nyquist. SFDR (spurious-free ...
High-side power switch with smarter fusing
STMicroelectronics has added I2T fusing to a automotive quad high-side power switch. As well as current-squared time fusing VNF9Q20F, as it will be known “responds within 100µs to turn off the [output] mosfet if excessive current is detected”, said ST. “Performing as an intelligent circuit breaker, [it] enhances board-net voltage stability and prevents PCB traces, connectors and wire harnesses from ...
Radiation-specified 40V GaN for space
EPC Space has created two surface-mount 40V radiation-specified GaN hemts for space use. EPC7001BSH is a 50A (120A pulse) 11mΩ transistor in 5.7 x 3.9mm packaging EPC7002ASH is a 15A (40A pulse) 28mΩ transistor in 3.4 x 3.4mm packaging “Both devices have a total dose radiation rating greater than 1,000kRad(Si) and SEE immunity for LET of 83.7MeV/mg/cm2 with Vds up ...