Updated: 600V and 700V GaN transistors co-packaged with drivers

Infineon Technologies is to integrate 600 and 700V GaN power hemts alongside gate driver chips inside single packages, in 5 x 6mm or 6 x 8mm SMD packages.

IGI70NxxxA2xS is to be a 700V range that combines a single GaN transistor with a single-channel driver in 5 x 6mm PQFN with with 140 to 500mΩ options (IGI70NxxxA2PS), or 6 x 8mm PQFN with 55 to 500mΩ options (IGI70NxxxA2MS).

IGI60LxxxxB1M are 600V devices will each have two GaN transistors in a half-bridge plus high and low-side drivers in 6 x 8mm LGA with 140 to 500mΩ options. Input-to-output propagation typically 98ns.

Updated: An earlier version of this article, based on Infineon information then supplied, incorrectly described the products as 650V devices

“Depending on the product group, the components feature a bootstrap diode and are characterised by loss-free current measurement, and adjustable switch-on and switch-off dV/dt,” said the company. “They also provide over-current, over-temperature and short-circuit protection functions.”

Applications are foreseen, said the company, in longer-range e-bikes, portable power tools, and lighter-weight household appliances such as vacuums, fans, and hairdryers.

Half-bridge samples are available, with single switch samples following in Q4.