New Yorker Electronics is aiming at displacing PowerPAK 1212 packaged mosfets by stocking a pair of symmetric 80V n-channel mosfets in a single 3.3 x 3.3mm package from Vishay. Called SiZF4800LDT, the “device provides designers with a space-saving solution for synchronous buck converters, point-of-load converters, and half-bridge and full-bridge power stages,” according to New Yorker. “In these applications, the high ...
Power
Electric vehicle charger hits half a megawatt
Delta has created a 500kW electric vehicle charger for trucks and busses. Called UFC500, it uses silicon carbide power transistors and charges two smaller vehicles simultaneously at up to 250kW each, or one vehicle at 460kW. The exterior design meets IP55 and IK10, and cables are top-mounted to reduce the changes of damage, on a moving arm to extend reach ...
Small top-side cooled automotive mosfets keep heat out of the PCB
Infineon is aiming at automotive power control with a 5 x 7mm top-side cooled surface-mount package, pitching it against the 5 x 6mm bottom-cooled SSO8. The package, SSO10T, has a 10μm gap instead of a thermal pad on the PCB side, and around 95% of heat will leave through the top, according to the company, typically to the ECU housing ...
BASF picks 6MWh sodium-sulphur battery for solar power back-up
BASF Schwarzheide has installed a 1MW 5.8MWh sodium-sulphur battery to increase the amount of energy it can use from the solar park at its manufacturing site in Lusatia Germany, where it produces electric vehicle battery materials. “The stationary energy storage system is another step towards increased sustainability in battery production for electric vehicles,” said company v-p of battery metals Daniel ...
Wurth advocates press-fit PCB connections for high-voltage vehicle power distribution
Würth Elektronik is promoting PCBs with press-fit power connectors as the interconnection technology of choice for high-voltage power distribution in mobile machines and commercial vehicles. It has a design service for vehicle companies seeking custom power distribution units that handle between 60 and 1,000V “that are compact, robust and can be flexibly configured”, it said. “Press-fit technology makes it possible ...
E-peas and Epishine hook up
E-Peas, the Belgian energy harvesting specialist, and Epishine, the Swedish indoor solar cell developer, are collaborating to advance the development of energy-efficient and sustainable consumer electronics. The partnership emphasizes the critical importance of aligning all system components, energy harvesting, power management and storage, to ensure optimal system performance. Recognizing that the efficiency of a system cannot be judged by its ...
High power battery connectors are polarised and sealed to IP67
Weidmuller has announced a series of battery connectors and battery connector cable assemblies. They are “engineered to handle high currents” and “designed to withstand harsh environmental conditions”, according to the company. Connectors for cables from 16 to 95mm2 are available, with contacts made from copper alloy finished with silver and, approved according to UL 4128. Predicted mechanical connection life, without ...
GaN, SiC and Si squeeze 4.5kW out of server PSU
Navitas Semiconductor has demonstrated a 4.5kW 54V server power supply using both GaN and SiC transistors. Claimed density is “over 130W/in3 with efficiency over 97%. The architecture replaces the standard four diode bridge (and boost power factor correction) at the front end with an active all-transistor circuit – a multi-phase totem pole power factor corrector. While often called ‘bridgeless’ because ...
2kV SiC mosfet in TO-247 has 14mm creepage and 5.4mm clearance
Infineon Technologies has put 2kV silicon carbide mosfet die in its four lead TO-247PLUS-4-HCC package, aiming them at systems with dc links up to 1.5kV. “It is the first discrete silicon carbide device with a breakdown voltage of 2,000V on the market, with a creepage distance of 14mm and clearance distance of 5.4mm,” according to the company. “The devices are ...
APEC 2024: GaN and SiC updates from Rohm
Long Beach, CA: Rohm Semiconductor rose above the industry’s GaN vs SiC debate with announcements from both camps. The first was a design win for its 650V GaN device, the EcoGaN, for the 45W output USB-C charger C4 Duo (pictured) by Innergie (a Delta brand). The company said that its GaN device contributes to efficiency in power supply and increased ...