Power Supplies

Applied EV has picked Cissoid to supply silicon carbide based inverter modules for its autonomous electric vehicles. The module, CXT-ICM3SA, was introduced at APEC earlier this year and combines a three-phase 1.2kV SiC mosfet bridge – rated at 340 to 550A depending on model – a driver board and a control board in a stack. The control board is built ...

Navitas Semiconductor has made fast versions of its Gen-3 650 and 1,200V silicon carbide mosfets, branded ‘G3F’ and available in packages including D2PAK-7 to TO-247-4. “We’re pushing the boundaries of SiC, with up to 600kHz switching speeds said company v-p of technology Sid Sundaresan. One proposed application is in continuous-conduction-mode totem-pole power factor correction (CCM TPPFC) circuits up to 10kW in ...

Infineon has announced a flurry of new power products as a prelude to PCIM in Nuremberg next week, the latest of which is a family of 600V super-junction mosfets. Its eighth generation, “the devices combine the best features of the 600V CoolMOS 7 series and are the successors to the P7, PFD7, C7, CFD7, G7 and S7 product families”, according ...

Cambridge GaN Devices (CGD) has teamed up with Qorvo to build a GaN-based evaluation kit for controlling brushless-dc and permanent magnet synchronous motors. From Qorvo comes its PAC5556A motor control IC that combines a 150MHz Arm Cortex-M4F processor and 128kbyte of flash, with 600V gate divers, PWMs and multi-chanel data conversion. CGD is providing its IC-based GaN power hemts that ...

Infineon has announced bi-directional GaN power transistors at 40, 650 and 850V, and a current sensing GaN transistor. There are two types of bi-directional transistor: The 650 and 850V devices are both normally-off monolithic gate-injection transistors with four operational modes via two separate gates and a substrate terminal, to deliver what the company calls ‘independent isolated control’. “They utilize the ...

Asahi Kasei Microdevices (AKM) and Silicon Austria Labs (SAL), have conducted a joint proof of concept for eFuse technology in high-voltage applications using SiC-based power devices. The results show that eFuse technology can significantly improve safety and reduce the material and maintenance costs of systems such as on-board chargers (OBC) in motor vehicles. SiC and GaN-based power electronics are increasingly ...

Recom has launched a series of DIN-rail ac-dc power supplies with 90 to 264Vac inputs and 120W, 240W or 480W outputs – and it has some new mini buck dc-dc module evaluation boards. Efficiency of the ac-dc DIN modules is up to 93.5%. All measure 123.4mm deep by 123.6mm high, and width is 30mm, 40mm or 56mm respectivley. The models are: ...

Infineon is putting 650V silicon carbide mosfet die into two packages with SO-type footprints: a thin (1.5mm) bottom-cooled 8 x 8mm leadless TO (TOLL – TO leadless), and 9.8 x 15 x 2.3mm 16 leg SO version with top-side cooling (‘TOLT’ package) (see photo). Die with typical on-resistances of 20, 40, 50 or 60mΩ are available in either package, and ...

Alpha and Omega Semiconductor is aiming at Meteor Lake and Arrow Lake notebooks with a multi-phase dc-dc converter controller that meets Intel IMVP 8, 9, 9.1, and 9.2 specifications. AOZ71137QI is a three rail seven-phase controller for CPUs that has: up to four phases for the core voltage (‘IA domain’), up to two phases for graphics (‘GT domain’) and one ...

Toshiba has announced 300mA LDOs in a 1 x 1 x 0.37mm DFN4D package. Quiescent current is typically 1.2μA with no load. They are “specifically aimed at applications powered by small-scale batteries [including] IoT modules, communications modules, wearable devices and other miniature equipment”, according to the company. There are over 30 devices spanning outputs of 0.8 to 5.0V, with an ...