Power Supplies

STMicroelectronics has added I2T fusing to a automotive quad high-side power switch. As well as current-squared time fusing VNF9Q20F, as it will be known “responds within 100µs to turn off the [output] mosfet if excessive current is detected”, said ST. “Performing as an intelligent circuit breaker, [it] enhances board-net voltage stability and prevents PCB traces, connectors and wire harnesses from ...

Emis has created a range of three phase, dual stage EMC filters designed for industrial motor and drive systems across 5 to 170kW. TMF3221 and TMF3222 “are housed in a space-saving slim book-shelf enclosure which may be installed next to inverters, converters or motor drives”, according to the company. “The devices are designed to meet the needs of power drive ...

EPC Space has created two surface-mount 40V radiation-specified GaN hemts for space use. EPC7001BSH is a 50A (120A pulse) 11mΩ transistor in 5.7 x 3.9mm packaging EPC7002ASH is a 15A (40A pulse) 28mΩ transistor in 3.4 x 3.4mm packaging “Both devices have a total dose radiation rating greater than 1,000kRad(Si) and SEE immunity for LET of 83.7MeV/mg/cm2 with Vds up ...

In the context of the explosive growth of the energy storage market. New energy storage market prospects With the increasing penetration of renewable energy, especially due to the instability of wind and solar power, the role of energy storage systems in balancing grid supply and demand and mitigating fluctuations is becoming increasingly evident. Additionally, the development of the electric vehicle ...

Infineon is aiming at 48V automotive applications with AUCN08S7N013, an 80V mosfet in a 5 x 6mm SSO8 that has a maximum on-resistance of 1.3mΩ at 25°C (Tj, 10Vgs, 88A Id). “48V applications including electric power steering, braking systems, power switches in zone architectures, battery management, e-fuse boxes, dc-dc and brushless dc motor drives,” it said. The mosfet is several ...

Shanghai-based WeEn Semiconductors unveiled 650V and 1,200V IGBTs with fast recovery anti-parallel diodes at PCIM in Nuremberg. “Based on fine trench gate field-stop technology, the IGBTs provide a more uniform electric field within the chip, support higher breakdown voltages and offer improved dynamic control,” according to the company. “A positive temperature coefficient simplifies parallel operation.” Ratings are 650V 75A, 1.2kV ...

Novosense Microelectronics announced a 24 channel automotive LED driver at PCIM in Nuremberg today. NSL21924 is a high-side driver, aimed at rear lights, exterior lights and general automotive interior and body lighting. 16 channel NSL21916 is also available. Qualification is to AEC-Q100 Grade 1 (Tj = -40 to +150°C). The LED supply voltage can be across 3 to 16V, and ...

Texas Instruments introduced a 450V intelligent power module that includes a GaN three-phase bridge for motors up to 250W. Called DRV7308, it can stand-off 650V and handle pulses up to 5A. Inside its 12 x 12mm QFN package and six 205mΩ hemts (at 25°C ambient), drivers and protection component, and it is capable of implementing inverters with >99% efficiency, according ...

Qorvo has picked depletion-mode (normally-on) silicon carbide JFET technology to build a 750V 4.3mΩ transistor for circuit breakers, and put it in a 10 x 12mm surface-mount TOLL package. “It was designed for circuit protection applications including solid-state circuit breakers, where low resistance, thermal performance and reliability are paramount,” according to the company. This “JFET can withstand high instantaneous junction ...

EPC is aiming at USB-C PD applications 50V 8.5mΩ GaN transistor with a 1.8mm2 footprint. EPC2057 measures 1.5 x 1.2mm and can handle 9.6A continuously (25°C) and 66A single 300µs pulses (25°C). With such a tiny package, thermals are important. According to the data sheet, junction-to-case thermal resistance is 2.3°C/W, then it is 7°C/W junction-to-board, 72.5°C/W junction to ambient on ...