Ka-band GaN-on-SiC MMIC PAs

Richardson RFPD, an Arrow Electronics company, has announced a featured lineup of Ka-band, GaN-on-SiC MMIC power amplifiers from United Monolithic Semiconductors.

Offered in die and plastic QFN packaging, the devices are available in a variety of power levels to support Ka-band SATCOM uplink and 5G FR2 bands n257, n258, n259 (partial), n260 and n261.

UMS’ proprietary GH15 GaN process is optimized up to 42 GHz and delivers high power, high PAE and high linearity. It is suitable for transmitting modulated waveforms.

The featured Ka-band MMIC amplifiers include:

Part Number	Frequency Range (GHz)	Psat (dBm)	Gain (dB)	Efficiency (%)	Drain Voltage (V)	Package Type
CHA6682-98F/00	24–27.5	37	25	32	20	Die
CHA8362-99F/00	26.5–31	44	25	30	25	Die
CHA6357-QKB/20	27–31	36	28	20	20	Plastic SMT
CHA8262-99F/00	27.5–31.5	41	24	25	20	Die
CHA6094-QKB/20	35–42.5	33	26	13	27	Plastic SMT
CHA6095-QKB/20	35–42.5	36	25	12	27	Plastic SMT
CHA7452-99F/00	35.5–40.5	39.5	29	24	20	Die
CHA7453-99F/00	37.5–41.5	39.5	28	22	20	Die
CHA7455-99F/00	39.5–42.5	39.5	32	24	20	Die

Samples and evaluation boards are available from Richardson RFPD. In addition to the above-listed standard parts, customisation, advanced packaging and foundry services are available.

For more: Ka-Band GaN-on-SiC MMIC RF Power Amplifiers for 5G & SATCOM from UMS webpage.

The devices are also available by calling 1-800-737-6937 (within North America) or find a local sales engineer (worldwide) at Local Sales Support.