Memory

Hynix was showing  off a sample of its 321-layer 1Tb TLC  NAND chips at The Flash Memory Summit earlier this week, though volume production isn’t due until 2025. Hynix used a CMOS under Array (CuA) technology which involves moving the peripheral circuitry under the cells. The company calls its peri under cell (PUC) technology ‘4D NAND’. It is not revealed ...

Micron has begun sampling an 8-high 24GB HBM3 Gen2 memory with bandwidth greater than 1.2TB/s and pin speed over 9.2Gb/s.   It is built on Micron’s 1β (1-beta) DRAM process node, which allows a 24Gb DRAM die to be assembled into an 8-high cube within an industry-standard package dimension. A 12-high stack with 36GB capacity will begin sampling in Q1 ...

Swissbit, the Swiss industrial storage and security specialist, is introducing e.MMCs and SD memory cards with capacities ranging from 4 to 8GB. They are based on 3D-TLC-NAND and optimised for power failure protection, industrial reliability, and high endurance, says the company, which suggests IIoT and smart city applications. e.MMC EM-30 Taking the two products in turn, the Swissbit EM-30 (153 ...

Weebit Nano firmly believes that ReRAM technology is reaching an industry tipping point. Caroline Hayes joined the company at Embedded World to check its progress. In Nuremberg, Weebit Nano was able to demonstrate its first Resistive RAM (ReRAM) product, the S130 ReRAM module, available from US fab SkyWater. The module, based on SkyWater’s 130nm CMOS process, is a big step ...

Lancaster University is creating a spinout company to develop a universal  memory called ULTRARAM. Invented by Physics Professor Manus Hayne (pictured) ULTRARAM is a novel type of memory that combines the non-volatility of a data storage memory, like flash, with the speed, energy-efficiency and endurance of a working memory, like DRAM. To do this it exploits quantum resonant tunnelling in ...

Scaling and wafer bonding in a cooperation between Kioxia and Western Digital have created a “218 layer 3D flash 1Tbit triple-level-cell and quad-level-cell with four planes, and features lateral shrink technology to increase bit density by over 50%,” according to Kioxia. Co-developed CBA (CMOS directly bonded to array) technology allows CMOS wafers and cell array wafers to be optimised and ...

GigaDevice is aiming at processors with a 1.2V core voltage with a family of 1.2V SPI NOR flash ICs. Called the GD25UF series, they run from 1.14V-1.26V and “provide for a simpler power system architecture, and for direct interfacing between the I/O pins of the SoC or processor and the GD25UF device”, according to the company. The 64Mbit GD25UF64E is ...

Longsys will be on display at the exhibition center of the embedded world in Germany, which is taking place from March 14 to 16, 2023. We are looking forward to meeting many of our German customers and partners. With the arrival of the Germany Embedded World Exhibition 2023, Longsys will showcase its latest products, including the automotive-grade UFS, automotive-grade eMMC, ...

Following Infineon Technologies’ acquisition of Cypress Semiconductor,  distributor Rutronik will now offer the memories, microcontrollers and other products in the Cypress portfolio. Infineon Technologies acquired Cypress in June 2019 and has added its memory, microcontrollers, sensor, Bluetooth and WiFi technologies to its own offerings. Rutronik was already a fanchised distributor for Infineon and the franchise has been expanded to include the ...

Industrial NAND flash devices from Flexxon include solid stat drives (SSDs), cards, modules, standard form industrial removable memory devices and ICs for cybersecurity, industrial, medical and automotive applications are  now available in the UK, Ireland, Germany, Switzerland and Austria from Nexus Industrial Memory. Nexus adds the non-removable devices for embedding as chips, modules, cards or SSDs to its portfolio of ...