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Tag Archives: FD-SOI

Europe to get 10nm and 7nm FD-SOI pilot line

FAMES Kick-Off CEA-Leti

A European pilot line for digital, analogue and RF ICs on 10nm and 7nm FD-SOI was announced today at French research lab CEA-Leti in Grenoble. Called Fames Pilot Line, it will create manufacturing processes for OxRAM, FeRAM, MRAM and FeFETs embedded non-volatile memories; RF switches, filters and capacitors; integrated inductors for dc-dc converters; and both heterogeneous and sequential 3D integration. ...

FD-SoI FPGAs get PCIe and LPDDR4 interfacing

Lattice Nexus fpga FD SoI transistor

Lattice Semiconductor is aiming at system control with a family of FPGAs that includes PCIe Gen 2 interfacing and embedded security. MachXO5T-NX, as they are called, are suited to “a set of control function designs for enterprise networking, machine vision and industrial IoT”, it said. They are built using the company’s FDSoI process (image right), which can dramatically reduce soft ...

Weebit Nano tapes out demo chip

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Weebit Nano has  taped out a demonstration chip integrating its embedded ReRAM module on a 22nm FD-SOI process technology. This is the first tape-out of Weebit ReRAM in 22nm, one of the industry’s most common process nodes, and a geometry where embedded flash is not viable. Weebit worked with its development partners CEA-Leti and CEA-List to successfully scale its ReRAM ...

Lattice picks FD-SOI and redesigns FPGAs for embedded vision and edge AI

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Lattice has switched to 28nm FD-SOI (fully-depleted silicon-on-insulator) technology for a range of sram-based FPGAs intended for embedded vision and artificial intelligence processing in industrial, automotive and consumer systems. Although they are ram-based, and therefore need to boot from adjacent memory, the firm has found a way to get chip outputs enabled, set and stable within 3ms of power-up – allowing ...

GloFo and eVaderis develop MRAM for MCU on 22nm FD-SOI

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Globalfoundries and eVaderis are co-developing an MCU reference design using GF’s embedded eMRAM technology on GloFo’s 22nm FD-SOI  platform to  support applications such as battery-powered IoT products, consumer and industrial microcontrollers, and automotive controllers. “Utilizing GF’s eMRAM as a working memory allows sections of the eVaderis MCU to power cycle frequently, without incurring the typical MCU performance penalty,” says eVaderis CEO ...

Andes core fabbed in FD-SOI

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Andes Technology has implemented 32bit CPU IP cores in 22FDX, the 22nm FDSOI process from Globalfoundries. “Our newest products, N25 32bit and NX25 64bit RISC-V based cores coupled with a mature toolchain, will provide even more value to customers in these advanced nodes by providing both high speed and power efficiency,” says Andes CTO Charlie Su. Andes announced it was ...

NANO16: FD-SOI moves towards 22nm and 14nm

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Fifteen months into its course, the WAYTOGO FAST EU R&D project for promoting FD-SOI has achieved some significant targets the European Nanoelectronics Forum in Rome today was told. . Boosters for 14 and 28 FD-SOI have been investigated and developed . SOl wafers: +20% nFET loff/leff tradeoff . STRASS technique: +1.6GPa demonstrated (stress level > sSOl) . BOX Creep: +10% ...