GaN transistor for vehicle lidar

EPC is aiming at vehicle lidar with an automotive qualified GaN power transistor with integrated reverse gate clamp diode.

EPC2219-GaN

Called EPC2219 it is a 65V 500mA 3.3Ω normally-off gallium nitride transistor qualified to AEC Q101.

“This EPC2219 has completed rigorous automotive qualification testing including humidity testing with bias [H3TRB], high temperature reverse bias [HTRB], high temperature gate bias [HTGB], temperature cycling [TC], as well as several other tests,” according to the company. It “will be followed with several more discrete transistors and integrated circuits designed for the harsh automotive environment”.


Packaging is 0.9 x 0.9mm wafer-scale. The company is keen to emphasise this is OK to the notoriously conservative automotive industry: “Of note is that EPC’s packaging passes all the same testing standards created for conventional packaged parts,” it said. “eGaN devices passing AEC Q101 testing are produced in facilities certified to the Automotive Quality Management System Standard IATF 16949.”


Vgs max is 5.75V and operation is across -40 to 150°C.

Applications are also foreseen in radar, ultrasonic sensors, satellite reaction wheels, high-frequency dc-dc conversion, wireless power and class-D audio.

The EPC2219 product page is here, and Digikey is stocking it.


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