“Of special interest to engineers designing USB4 and Thunderbolt interfaces, the new device uses Nexperia’s TrEOS ESD protection technology with active silicon-controlled rectification,” according to the firm. “It delivers a combination capacitance down to 0.1pF), dynamic resistance down to 0.1Ω and 20A 8/20µs surge robustness.”
The part number is PESD2V8R1BSF, and it comes in a low-inductance 0.6 x 0.3 x 0.3mm DSN0603-2 (SOD962) package.
“To avoid signal integrity issues, PESD2V8R1BSF ESD protection diode offers insertion loss of -0.21dB at 10GHz and return loss of -17.4dB at 10GHz,” said Nexperia product manager Stefan Seider. “The device is suitable for the higher voltage requirements of USB 3.2. This means it can be placed right behind the USB Type-C connector to protect the coupling capacitance as well, while still being backwards compatible to USB3.2.”
Operation is bi-directional and snap-back – where it clams to a lower voltage once the applied voltage reaches a higher threshold – so it cannot be connected to unlimited dc current sources. The devices must not be kept in the snap-back state after a clamping event – see the data sheet (available through this product page). Reverse stand-off voltage is -2.8 to +2.8V.
Capacitance of 100fF is a typical figure measured at 1MHz 25°C with zero reverse voltage. Max under thee conditions is 150fF.