Toshiba announces TLP5231 dual output IGBT/mosfet driver

Toshiba has announced an IGBT/mosfet gate driver equipped with additional built-in functionality. The TLP5231 is aimed at applications including industrial inverters, uninterruptible power supplies (UPS), power conditioners for solar energy and motor controls.

The pre-driver has a pair of outputs designed to drive external p-channel and n-channel mosfets used for current buffers. This allows the usage of mosfets with various current ratings, meaning that the IGBT can be controlled by a rail to rail gate voltage. The driver can source and sink peak currents up to 2.5A and is rated for a continuous 1A.

It incorporates overcurrent detection implemented by sensing VCE(sat), as well as undervoltage lock out, both of which provide an open collector fault signal to the primary side. These features have not been available in previous Toshiba drivers such as the TLP5214 & TLP5214A.

Additionally, gate voltage soft turn off time after overcurrent detection can be controlled by another external n-channel mosfet. Propagation delays (L/H & H/L) can be between 100-300ns.

The TLP5231 is housed in a SO16L surface-mount package, and offers an isolation voltage (BVs) of 5000Vrms with an internal isolation thickness in excess of 0.4 mm.

Its operating temperature range spans -40°C to 110°C,

Creepage and clearance distances are at least 8.0mm, which Toshiba says makes the driver suitable for safety critical applications.