Tag Archives: Schottky

Nexperia has put an ideal diode, including its p-channel mosfet, and reverse polarity protection, in a 2.1 x 1.25 x 0.95mm TSSOP6 package. Called NID5100, it is aimed at industrial and consumer applications, and has an automotive-qualified cousin named NID5100-Q100. “NID5100 supports ‘OR-ing’ multiple power supplies while retaining reverse polarity protection and provides fast response time for smooth power transfer,” ...

SemiQ has put 1,200V silicon carbide mosfet and Schottky diode half-bridges into standard ’62mm’ industrial power modules. There are four parts, each measuring 62 x 106.5 x 17mm (plus terminals): two mosfet hald-bridges and two Schottky half-bridges, aimed at new designs as well as efficiency-boosting replacements in legacy systems. 1.2kV 62mm power modules  Configuration Current Rds(on) GCMX003A120S7B1 SiC mosfet half-bridge ...

Silicon carbide chip company SemiQ has begun a known-good-die screening program for SiC mosfets “that delivers electrically sorted and optically inspected SiC technology ready for back-end processing and direct die attachment”, it said. It covers 1,200V 20 (pictured), 40 or 80mΩ mosfet die (119, 63 or 35A at 25°C respectively). “Our known-good-die SiC mosfets provide performance advantages such as near-constant ...

Rohm has created a proprietary trench MOS structure for 100V Schottky diodes to improve the trade-off between forward voltage and reverse leakage. It has been used to create the YQ series of rectifier diodes, available in surface-mount packages from 0.5 x 1mm to TO-263 with ratings between 1A and 30A. Most of them are available with automotive qualification. Leakage is ...

SemiQ will be exhibiting its 1.2kV SOT-227 silicon carbide mosfet power modules at APEC, the Applied Power Electronics Conference, at the end of February. The modules come with or without a co-packaged Schottky diode, with current ratings between 30 and 113A, and on-resistance spanning 80mΩ to 20mΩ respectively (see table). The SOT-227 package is designed to be bolted to a ...

Toshiba has announced twelve 650V silicon carbide (SiC) Schottky barrier diode (SBDs) based upon its 3rd generation technology. In this series, called TRSxxx65H, according to the company a new Schottky metal has been employed, and the junction barrier structure has been changed to lower the electric field compared with the 2nd generation to reduce leakage. Versions with nominal maximum continuous ...

Nexperia has introduced a 10A 650V silicon carbide (SiC) industrial Schottky diode in a 2pin through-hole TO-220 plastic package. Called PSC1065K, the company is not making its full data sheet public – the data brief reveals 22nC total capacitive charge (Vr=400V, 200A/μs, Tj=150°C), but not forward voltage. Editor’s note, this did read 15nC – taken from the data brief which ...

Diodes has announced silicon carbide Schottky diodes rated at 650V and 1.2kV, the company’s first SiC Schottkys. The DSCxxA065 series has eleven 650V diodes rated at 4, 6, 8 or 10A. The DSCxx120 series has eight 1.2kV diodes rated at 2, 5 or 10A. “These wide-bandgap Schottky barrier diodes bring the benefits of significantly improved efficiency and high-temperature reliability,” said ...

Microchip has unveiled a 3.3kV silicon carbide mosfet and mating Schottky diodes. MSC025SMA330 is the 25mΩ mosfet in a four-lead TO-247 package, and MSC090SDA330 is the 90A diode in a similar two-lead ‘T-Max’ package. Both are also available in die form. Further data on the mosfet is sadly not public at the moment, but the diode data sheet is available and shows ...

Rohm has added 24 Schottky diodes for protection and rectification in automotive, industrial and consumer applications. Rohm diode line-up When Schottky barrier diodes are used, “if forward voltage lowered to improve efficiency, reverse current, which is inversely related to forward voltage, will become higher”, according to the company. “This increases the risk of thermal runaway, so it is important to balance ...