Alpha and Omega has turned to 5 x 6mm LFPAK surface-mount packaging for a family of mosfets aimed at industrial, server power, solar, and telecommunication applications. Available at 40V, 60V, and 100V (see table) “AOS’s LFPAK enables higher board-level reliability due to gull-wing leads, which offer a ruggedised solution for board-level environmental stresses”, according to the company. “Gull-wing leads also ...
Toshiba has introduced a 60V p-channel mosfet rated at 60V and 90A continuous current, with AEC-Q101 qualification for automotive use. Called XPH8R316MC (90A), the company sees it being used in vehicles, in load switches, electronic relays and motor drives. A similar part, XPH13016MC, is the same except rated at 60A. In both cases, pulse rating is double the continuous current ...
Alpha and Omega Semiconductor (AOS) combines TOLL packaging with clip technology in its automotive-grade 80V and 100V mosfets. The automotive grade mosfets are in a new TO-leadless package, designed to optimise current capability for on-board batteries in two- and three-wheel vehicles and other light vehicles, automotive BLDC motor and battery management for e-mobility. According to the company, the automotive TOLL ...
Toshiba is in volume production of a photovoltaic output photocoupler with an enhanced open-circuit voltage suitable for gating high-voltage power MOSFETs commonly used in solid-state relays (SSRs). The TLX9910 photocoupler is primarily intended for use within SSR applications in automotive. However, it can equally be used in industrial applications, such as renewable energy. This combination enables high-voltage, high-current switching, which ...
Vishay has introduced an AEC-Q101 qualified dual 60V n-channel mosfet in an asymmetric package – a 5 x 6mm ‘PowerPAK’ SO-8L (see photo). Called SQJ264EP and designed for automotive dc-dc switch-mode power supplies, to increase efficiency the mosfet are asymmetric as well as the package. Mosfet 1 20mΩ on-resistance (10V) 9.2nC typical gate charge 20A max (25°C, 15A 125°C) 27W ...
Vishay has introduced a 30V p-channel power mosfet with an on-resistance of 1.7mΩ at 10V, claiming it to be the first ever. Called SiRA99DP, it comes in a thermally-enhanced SO-8 package and uses the company’s fourth-generation TrenchFET process. “Combining this low Rds(on) with a gate charge of 84nC, the SiRA99DP delivers best-in-class gate charge times on-resistance of 185mΩ.nC,” said Vishay. “As a ...
Vishay has introduced a 25V n-channel power mosfet that it claims has industry’s lowest maximum on-resistance: 0.58mΩ at 10V, and lowest gate charge and gate charge times on-resistance figure of merit for devices with on-resistance below 0.6mΩ – although the firm went on to say: “the device released today is one of the only two 25V mosfets in the world ...
Toshiba has announced 40V and 60V power mosfets based on its latest generation U-MOS-IX-H trench semiconductor process. TK3R1P04PL, TK4R4P06PL and TK6R7P06PL N-channel MOSFETs can be driven by logic at 4.5V, and the 40V device can offer on-resistance down to 3.1mΩ with 10V on the gate. They come in DPAK, and are intended for power conversion applications including AC-DC converters, DC-DC converters ...
Infineon is to buy the world’s oldest independent semiconductor company, International Rectifier, for $3 billion. The deal is 50% above IR’s market cap yesterday.
Zetex announces a synchronous rectifier controller for flyback converters. Combined with a discrete power Mosfet, the ZXGD3101T8 'zero point detector driver' replaces Schottky and other diodes to cut power losses.
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