PCIM: Navitas optimises SiC for speed

Navitas Semiconductor has made fast versions of its Gen-3 650 and 1,200V silicon carbide mosfets, branded ‘G3F’ and available in packages including D2PAK-7 to TO-247-4.

“We’re pushing the boundaries of SiC, with up to 600kHz switching speeds said company v-p of technology Sid Sundaresan.

One proposed application is in continuous-conduction-mode totem-pole power factor correction (CCM TPPFC) circuits up to 10kW in in data centres to reach 100-120kW per-rack.

“G3F mosfets are developed using a proprietary ‘trench-assisted planar’ technology, and offer better-than-trench-mosfet performance,” according to Navitas.

An example design, is available for a CRPS185 form-factor interleaved 4.5kW server PSU, using 650V 40mΩ G3F FETs in the interleaved CCM TPPFC and the company’s GaN power ICs in the LLC stage. 138W/inch³ and 97% peak efficiency are claimed, as is ‘Titanium Plus’ compliant efficiency.

For the electric vehicle market, the 1,200V 34mΩ G3F34MT12K is used in an example 22kW, 800V bi-directional on-board charger and a 3KW dc-dc converter.

Parts are so far only available certain customers.

Find Navitas in stand 544 in hall 9 of PCIM in Nuremberg over 11 to 13 June.