Products

Infineon is aiming at 48V automotive applications with AUCN08S7N013, an 80V mosfet in a 5 x 6mm SSO8 that has a maximum on-resistance of 1.3mΩ at 25°C (Tj, 10Vgs, 88A Id). “48V applications including electric power steering, braking systems, power switches in zone architectures, battery management, e-fuse boxes, dc-dc and brushless dc motor drives,” it said. The mosfet is several ...

Segger has introduced microcontroller security feature configuration to its in-circuit programmers, debug probes and trace probes. “Modern chips require an increasing level of customer and device-specific configuration,” according to the company. “The driving force is security, especially as more and more devices connect to the Internet. Unfortunately, there is no industry standard for provisioning device security and configuration. Options differ ...

Shanghai-based WeEn Semiconductors unveiled 650V and 1,200V IGBTs with fast recovery anti-parallel diodes at PCIM in Nuremberg. “Based on fine trench gate field-stop technology, the IGBTs provide a more uniform electric field within the chip, support higher breakdown voltages and offer improved dynamic control,” according to the company. “A positive temperature coefficient simplifies parallel operation.” Ratings are 650V 75A, 1.2kV ...

CUI Devices has announced an incremental encoder for motors with shafts between 1 and 6.35mm in diameter. “The AMT12 series brings the same durability, accuracy and immunity to environmental particulates as current AMT encoder models in a more compact 22.2 x 22.2 x 12.8mm package,” according to the company. Outputs are single-ended cmos quadrature A and B signals that can ...

Novosense Microelectronics announced a 24 channel automotive LED driver at PCIM in Nuremberg today. NSL21924 is a high-side driver, aimed at rear lights, exterior lights and general automotive interior and body lighting. 16 channel NSL21916 is also available. Qualification is to AEC-Q100 Grade 1 (Tj = -40 to +150°C). The LED supply voltage can be across 3 to 16V, and ...

Texas Instruments introduced a 450V intelligent power module that includes a GaN three-phase bridge for motors up to 250W. Called DRV7308, it can stand-off 650V and handle pulses up to 5A. Inside its 12 x 12mm QFN package and six 205mΩ hemts (at 25°C ambient), drivers and protection component, and it is capable of implementing inverters with >99% efficiency, according ...

Qorvo has picked depletion-mode (normally-on) silicon carbide JFET technology to build a 750V 4.3mΩ transistor for circuit breakers, and put it in a 10 x 12mm surface-mount TOLL package. “It was designed for circuit protection applications including solid-state circuit breakers, where low resistance, thermal performance and reliability are paramount,” according to the company. This “JFET can withstand high instantaneous junction ...

EPC is aiming at USB-C PD applications 50V 8.5mΩ GaN transistor with a 1.8mm2 footprint. EPC2057 measures 1.5 x 1.2mm and can handle 9.6A continuously (25°C) and 66A single 300µs pulses (25°C). With such a tiny package, thermals are important. According to the data sheet, junction-to-case thermal resistance is 2.3°C/W, then it is 7°C/W junction-to-board, 72.5°C/W junction to ambient on ...

NI has set out its stall for AI in the test industry. Following the announcement of LabView AI assistant at the end of last year (currently in beta testing), CTO of technology and innovation, Kevin Shultz spoke to Electronics Weekly about what will be the role of AI in test. He explained that the increasing complexity of products being tested ...

Applied EV has picked Cissoid to supply silicon carbide based inverter modules for its autonomous electric vehicles. The module, CXT-ICM3SA, was introduced at APEC earlier this year and combines a three-phase 1.2kV SiC mosfet bridge – rated at 340 to 550A depending on model – a driver board and a control board in a stack. The control board is built ...