Tag Archives: HEMT

Infineon Technologies is to integrate 600 and 700V GaN power hemts alongside gate driver chips inside single packages, in 5 x 6mm or 6 x 8mm SMD packages. IGI70NxxxA2xS is to be a 700V range that combines a single GaN transistor with a single-channel driver in 5 x 6mm PQFN with with 140 to 500mΩ options (IGI70NxxxA2PS), or 6 x ...

EPC Space has created two surface-mount 40V radiation-specified GaN hemts for space use. EPC7001BSH is a 50A (120A pulse) 11mΩ transistor in 5.7 x 3.9mm packaging EPC7002ASH is a 15A (40A pulse) 28mΩ transistor in 3.4 x 3.4mm packaging “Both devices have a total dose radiation rating greater than 1,000kRad(Si) and SEE immunity for LET of 83.7MeV/mg/cm2 with Vds up ...

Infineon has announced a flurry of new power products as a prelude to PCIM in Nuremberg next week, the latest of which is a family of 600V super-junction mosfets. Its eighth generation, “the devices combine the best features of the 600V CoolMOS 7 series and are the successors to the P7, PFD7, C7, CFD7, G7 and S7 product families”, according ...

Infineon has announced bi-directional GaN power transistors at 40, 650 and 850V, and a current sensing GaN transistor. There are two types of bi-directional transistor: The 650 and 850V devices are both normally-off monolithic gate-injection transistors with four operational modes via two separate gates and a substrate terminal, to deliver what the company calls ‘independent isolated control’. “They utilize the ...

Power Integrations is to acquire the assets of Odyssey Semiconductor for its vertical gallium nitride transistor technology. All commercial GaN power transistors are lateral current flow devices, including those already made by Power Integrations – technical limitations make vertical GaN devices very hard to make on a commercial scale. In a lateral device, source and drain contacts are on top ...

Innoscience Technology has created a gate driver specifically for GaN power transistors. The single-channel INS1001DE is intended to supply fast powerful voltage-regulated waveforms to the gates, which are extremely sensitive to over-voltage stress. Its output pulse amplitude is set by a low-drop-out regulator using two resistors, to, for example 6V which is commonly specified for enhancement-mode GaN hemts (diagram below ...

EPC is claiming “the lowest on-resistance GaN FET on the market” for its 1mΩ 100V EPC2361, which comes in a 3 x 5mm QFN package with top and bottom cooling. 1mΩ is at 50A 25°C with 5V on the gate, and rises to ~1.8mΩ at the max operating temperature of 150°C (minimum is -40°C). The preliminary data sheet has no ...

Innoscience Technology has launched a 100V bi-directional GaN-on-silicon bi-directional transistor, intended to replace a pair of back-to-back mosfets for turning a power rail on and off. It “can be employed in 48V or 60V battery management systems, as well as for high-side load switch applications in bidirectional converters and switching circuits in power systems”, according to the company, which sees ...

Allegro MicroSystems has created an isolated gate driver IC for GaN power transistors that has no need for high-side bootstrapping nor the provision of a secondary side drive supply voltage. Instead, a dc-dc converter within AHV85111 produces secondary-side dc power rails – one positive and one negative – to provide gate drive power from a 12V supply (10.8 – 13.2V) ...

Rohm has introduced a nanosecond gate driver for GaN power transistors, aimed at lidar, dc-dc converters and Class-D audio. “It is ideal for high-speed GaN switching, with a minimum gate input pulse width of 1.25ns,” according to the company. “As GaN devices are sensitive towards gate input over-voltage, Rohm has developed a method to suppress gate overshoots and has implemented ...