CGD devices have lowest-ever on-resistance

Cambridge GaN Devices (CGD) has launched its lowest ever on-resistance (RDS(on)) parts which have been engineered to deliver the benefits of GaN to high-power applications such as data centres, inverters, motor drives and other industrial power supplies.

Cambridge GaN Devices (CGD) has launched its lowest ever on-resistance (R_DS(on)) parts which have been engineered to deliver the benefits of GaN to high-power applications such as data centres, inverters, motor drives and other industrial power supplies.

ICeGaN P2 series ICs feature R_DS(on)levels down to 25 mΩ, supporting multi kW power levels with the highest efficiency.

“This new series of Power GaN ICs is achieves and exceeds 100 kW/rack power density in data centres, required by most recent TDP (Thermal Design Power) trends for high-density computing,“ says CGD CEO Andrea Bricconi, “turning to motor control inverters, developers are looking to GaN to reduce heat for smaller, longer-lasting system power. These are just two examples of markets that CGD is now aggressively targeting with these new high-power ICeGaN ICs.”

Incorporating an on-chip Miller Clamp to eliminate shoot-through losses during fast switching and implementing 0 V turn off to minimise reverse conduction losses, ICeGaN ICs outperform discrete e-Mode GaN and other incumbent technologies.

The new packages offer improved thermal resistance performance as low as 0.28 K/W – again, and the dual-gate pinout of the dual side DHDFN-9-1 (Dual Heat-spreader DFN) package facilitates optimal PCB layout and simple paralleling for scalability, enabling customers to address multi kW applications with ease.

The new packages have also been engineered to improve productivity, with wettable flanks to simplify optical inspection.

New P2 Series ICeGaN power ICs are sampling now. The family includes four devices with R_DS(on)levels of 25 mΩ and 55 mΩ, rated at 60 A and 27 A, in 10 x 10 mm footprint DHDFN-9-1 and BHDFN-9-1 (Bottom Heat-spreader DFN) packages.

In common with all CGD ICeGaN products, the P2 series can be driven using any standard MOSFET or IGBT driver.

Two demo boards feature the new P2 devices: a single leg of a 3-phase automotive inverter demo board, developed in partnership with the French public R&I institute IFP Energies nouvelles, and a 3 kW totem-pole power factor correction demo board.