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Tag Archives: wafer-level

ECTC: Triple wafer stacking for image sensors with embedded AI

Leti wafer stack for AI image sensor

French research lab CEA-Leti has reported stacking three 300mm wafers for improved CMOS image sensors, using hybrid wafer bonding and high-density through-silicon vias. The announcement was made in three papers at ECTC, the 2024 IEEE Electronic Components and Technology Conference in Colorado. 6μm hybrid bonding pad pitch, and TSVs are 1 x 10μm It is working towards a new generation ...

12 and 30V mosfets in 1mm wafer-level packaging

Nexperia DSN 1006 DSN1010 packages

Nexperia has introduced 30V and 12V n-channel trench mosfets in 1mm packaging. In 1 x 0.6 x 0.2mm DSN1006: PMCB60XN 30V, 4A, 50mΩ (4.5Vg) PMCB60XNE 30V, 4A, 55mΩ (4.5Vg), 2.5kV HBM ESD protection “This gives them the lowest on-resistance per die area among similar 30V mosfets in the market,” claimed the company. In 0.96 x 0.96 x 0.24mm DSN1006 (SOT8007) ...

Nujira prepares for volume as LTE chips ship

Nujira.jpg

Nujira is extending its foundry agreement with TowerJazz to include production of the Cambridge firm’s NCT-L1300 Coolteq.L ET modulator chip for LTE handsets. Nujira is gearing up for volume production to support 4G smartphone shipments in 2014. The NCT-L1300 is fabricated in TowerJazz’s proven 0.18 micron RF CMOS technology. “Over the last year we’ve built an excellent relationship with TowerJazz; its processes offer us the ideal ...