Tag Archives: non-volatile

Tokyo Tech has picked aluminium scandium nitride (AlScN) to make ferroelectric films that remain stable at up to 600°C in hydrogen. “This high stability makes them ideal for high-temperature manufacturing processes under the H2-included atmosphere used in fabricating advanced memory devices,” said the university. “Compared to existing ferroelectric materials, these films maintain their ferroelectric properties and crystal structure even after ...

Researchers at Harvard University are looking for a simple way to store data for a long time – longer than the decades of life preducted for DVDs and flash memory. Encoding data on DNA has been done, as it has on other long-chain polymers with long life, and the data desnity is emormous: ~1018 bytes/mm3, according to the university. But making ...

Infineon has announced a second-generation of its non-volatile static RAMs (nvSRAM). “The new generation of devices are qualified for QML-Q and high-reliability industrial specifications to support non-volatile code storage and data-logging in harsh environments, including aerospace and industrial applications,” according to the company. “Both 5V and 3V versions support boot code, data logging and calibration data storage for aerospace, communications ...

The University of Lancaster has taken a step forward with its novel non-volatile memory that can be written and erased for one hundredth of the energy needed by flash or DRAM. It is also fast enough to be used instead of DRAM. This article was originally published last week, but without a diagram It is around 10-17J for a device with ...

Researchers at the University of Lancaster have created a non-volatile memory that might eventually store data for 1% of the energy required by DRAM and 0.1% that of flash – both modelled at 20nm. “Our device has an intrinsic data storage time that is predicted to exceed the age of the Universe, yet it can record or delete data using ...

Scientists from the Moscow Institute of Physics and Technology (MIPT) have succeeded in growing ultra-thin (2.5-nanometre) ferroelectric films based on hafnium oxide that could potentially be used to develop non-volatile memory elements called ferroelectric tunnel junctions. As demand for data storage increases researchers are trying to develop faster and more compact storage devices. The ideal would be a “universal” memory ...

Texas Instruments has developed an ARM Cortex-M0 that can sleep on zero power and wake in 400ns, intended to run on harvested power.

Unity Semiconductor, the US start-up with a non-volatile memory technology scalable to 20nm, is looking for a partner to bring the technology to market.

SiliconBlue reveals details of its low power SRAM FPGAs for handhelds, with on-chip non-volatile memory. The aim is to offer Asic-like logic capacity for battery-powered, handheld consumer applications.

The search for an alternative non-volatile memory technology to traditional floating gate flash is boosted by an attempt to raise MRAM to the Gbit level