Tag Archives: DDR

By the end of 2024, the DRAM industry is expected to have allocated approximately 250K/m (14%) of total capacity to producing HBM TSV, with an estimated annual supply bit growth of around 260%, says TrendForce svp Avril Wu. HBM’s revenue share within the DRAM industry—around 8.4% in 2023—is projected to increase to 20.1% by the end of 2024. The die ...

JEDEC has published a new JESD318 Compression Attached Memory Module (CAMM2) Common Standard, which defines the electrical and mechanical requirements for Compression-Attached Memory Modules. It covers both Double Data Rate, Synchronous DRAM Compression-Attached Memory Modules (DDR5 SDRAM CAMM2s) and Low Power Double Data Rate, Synchronous DRAM Compression-Attached Memory Modules (LPDDR5/5X SDRAM CAMM2s). The standards body highlights that DDR5 and LPDDR5/5X ...

Teledyne e2v is shipping 4byte radiation-tolerant space-grade DDR4 memory. The device, called DDR4T04G72, is a 15 x 20 x 1.92mm multi-chip module that can operate at 2.4Gtransfer/s. Its bus assigns 64bits to data and an additional 8bits to error correction. The company sees it being used with its own Qormino processors, and the memories are compatible with “the vast majority of processors, ...

Alliance Memory has introduced fast 128 and 256Mb CMOS synchronous DRAMs in 54ball TFBGA packages. Sized 8x8x1.2mm, the memories are 8Mx16 and 16Mx16 with...

Toshiba will launch a range of CompactFlash memory cards for the DSLR camera market in spring 2013

With more processor cores integrated into a single chip, board-level designers need to find space for the additional memory required to support higher levels of processing power

Based on PMC-Sierra's SRC 8x6G RoC and ARC RAID stack, Adaptec Series 6 controllers are family of low-profile MD2 form factor Unified Serial RAID adapters offer

The devices’ built-in byte-mode erasing capability allows easy parameter update; and 128-byte page write, together with 5ms write time, results in rapid program

Ramtron has launched power efficient 512-Kbit and 1-Mbit serial F-Ram V-family memory.

Toshiba 512GByte solid state drive and next-generation SSD family uses 43nm MLC NAND.