Nanusens has demonstrated a mems digitally-tuneable capacitor for 5G and 6G RF front-ends, that is compatible with CMOS IC processing and can be integrated with circuitry. The Q-factor is above 100 at 1GHz, and the four-bit capacitor has a minimum capacitance of 450fF (30fF/capacitor) with them all off and tunes up to ~1pF – a capacitance ratio of 2.2 which ...
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Imec unveiled a CMOS 56Gbit/s zero-IF D-band beam-forming transmitter at the IEEE RFIC Symposium in Washington. “It is a key component of a 4-way beamforming transceiver chip currently being developed by imec’s researchers,” according to the Belgian research lab. “With this technology, they aim to support the deployment of short-range wireless services at frequencies above 100GHz.” It sees Gbit/s communication ...
Delo has created a sealant adhesive for bonding glass filters directly on to cmos image sensor die. “EG6290 can be dispensed in narrow high bond-lines, can compensate for temperature-dependent pressure changes, and meets routine automotive standards,” according to the company, which clarified that it “fulfills the requirements of the AEC-Q100 Grade 2 automotive industry standard”. Young’s modulus is 2,350MPa and ...
Nexperia has unveiled analogue switches that can work with control logic from 1.8 to 5V, regardless of supplies between 1.5 and 5.5V. There are two versions: NMUX1308, an 8:1 analogue multiplexer/demultiplexer which is compatible with, but more capable than, existing 4851 and 4051 analogue switches, and the NMUX1309 dual 4:1 analogue mux/demux which can replace 4852 and 4052 devices. All ...
Nanusens has designed an all-digital capacitance measurement circuit to integrate alongside its MEMS sensors. “This means that both the sensor structure and its detection circuitry can be made at the same time within a chip using standard CMOS processes on whatever process node is required,” said the Devon, UK company. “As a result, ASICs can now be made with several ...
Van der Waals metal contacts could be the key to CMOS made from thin-film 2D semiconductors, according to the Korea Institute of Science and Technology (KIST), which has made contacts from chlorine-doped tin diselenide. “It was difficult to implement complementary logic circuits with conventional two-dimensional semiconductor devices because they only exhibit the characteristics of either n-type or p-type devices due to ...
IBM revealed vertical FET CMOS logic at a sub-45nm gate pitch on bulk silicon wafers at the IEEE International electron devices meeting in San Francisco this week. IBM’s VTFET with a vertical channel (yellow) and gate-all-around (blue). Contacts are brown and the white line shows current flow. It calls them VTFETs, for vertical transport FETs, and is describing the channel cross-section ...
Researchers from the University of Bristol have made a detector to measure quantum features of light in more detail than ever before, with a sensor “clocked at an order of magnitude faster than the previous state-of-the-art,” said Bristol. It was used to measure the unique properties of ‘squeezed’ quantum light at record high speeds, according to the university’s Quantum Engineering Technology ...
Toshiba has released an micro-power CMOS operational amplifier, drawing a maximum of 600nA and typically 270nA (1.5V supply, -40 to 105°C). Called TC75S102F, it will run from supplies between 1.5V and 5.5V and is rail-to-rail on both input and output. Unusually for an op-amp, no input excursion outside the rails is allowed at all. “Operational amplifiers have a multitude of uses including ...
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