80 and 100V mosfets in 5×6 and 8×8 LFPAK

Nexperia has introduced 80 and 100V mosfets in 5 x 6 and 8 x 8mm footprint LFPAK packaging with Rds(on) ranging from 1.8 to 15mΩ, or 2.07mΩ upwards for the 100V parts.

“Many mosfet manufacturers focus on achieving high efficiency through low Qg(total) and low Qgd, when benchmarking the switching performance of their devices against alternative offerings,” said the company. “However, Nexperia has identified Qrr as being just as important due to its impact on spiking and, in turn, the amount of electromagnetic interference (EMI) generated during device switching.”

It has not handed out figures for these parameters, so, randomly selecting the 8 x 8mm, 80V, 2.3mΩ, 240A, n-channel PSMN2R3-80SSF, the data sheet figures are:

Qg(total) 61 – 184nC (123nC typ) – 25Ad, 40Vd, 10Vg, 25°C
Qgd: 7 – 51nC (22nC typ) – same
Qr: 47nC typ (no max/min) – 25As, -100A/µs, 0Vg, 40Vd, 25°C

According to the company, to reduce on-resistance it has as decreased epi thickness and increased doping to increasing epi conductivity.

Partly to cope with increased doping, surface fields have been reduced (left) by deep trenches with oxide enhancement and an embedded source field plate.

Right:
Red: smaller gate structure
Blue: deeper surface implant
Yellow: shorter conduction channel

The choice of legged packaging is deliberate – the added flexibility reduces the chance of mechanical failure due to thermal cycling.

Further devices are planned in 12 x 12mm CCPAK1212 packaging, which also has flexible legs, and also in the pipeline is a 1.2mΩ 80V 8 x 8mm LFPAK device.

Get an idea of the range of 80V (left) and 100V (below) devices from these graphs – as the generations and companies are not mentioned, take the ‘competitor’ figures with a pinch of salt.