Isolated gate driver works up to 2.3kV

Infineon has created a family of single-channel isolated gate driver for IGBTs and silicon carbide mosfets with up to 300kV/μs common-mode transient immunity and up to +6 and -8.5 A typical peak current.

Called 1ED332x, and branded ‘F3 Enhanced’, they come in 300mil wide DSO 16 packaging with 8mm creepage distance.

Operation is expected with devices between 600V and 2.3kV – abs max output supply for the output side of the chip is 40V.

Bipolar output-side supplies can be used to pull the gate negative (left).

The input-side chip inside can be directly connected to a standard
3.3 or 5V DSP or microcontroller, and dual inputs allow either logic polarity to be used.

Typical propagation delay is 85ns, and the company claims 15ns max IC-to-IC propagation delay matching.

“The tight propagation delay matching allows minimum deadtime improving system efficiency and decreasing harmonic distortion,” it said. “The driver family provides short-circuit clamping and active shutdown as well as an active Miller clamp.”

Isolation is though a coreless transformer, and safety certification is to UL 1577 with Viso at 6,840Vrms for 1s and 5,700Vrms for 60s. Insulation intended to be reinforced to VDE 0884-11 with Viorm = 1,767Vpeak (pending).

Application is expected in industrial drives, solar systems, electric vehicle charging, energy storage and commercial air conditioning.

EVAL-1ED3321MC12N is the matching evaluation board (pictured, and see below for pricing).