Low-spiking 100/80V mosfet range gets 8x8mm packaging

“The Qgate.Rds(on) figure-of-merit has long been a focus for semiconductor manufacturers aiming to improve the efficiency of MOSFET switches,” according to the company. “However, relentlessly pushing this figure ever lower has had the unintended consequence of increasing spiking levels when a mosfet switches. Having identified this as an emerging issue, Nexperia began to research how modifying other process technology parameters might help to address it.”

The result was a series of 80 and 100V mosfets with lower Qrr (reverse recovery charge) that reduce spiking during switching “while exhibiting the same high-efficiency performance as competing mosfets”, it said.

Initially they were available in Nexperia’s LFPAK56E, a 5 x 6mm SOT1023 package.

Now it has added options in the marginally smaller LFPAK56 (SOT669) and the considerably larger  LFPAK88 (SOT1235 8 x 8 x 1.6mm).

Picking the 80V, 2.8mΩ, 190A PSMN2R8-80SSF at random, its 8 x 8mm package offers a maximum junction to mounting base resistance of 0.44K/W.

For reference, source-drain diode Qr (recovered charge) is 47nC (25A, -100 A/µs, 0Vgs, 40Vds)

The same figure for the LFPAK56 (smaller 5 x 6mm) 100V, 11.8mΩ 65A PSMN012-100YSF is 1.16K/W (1.04 k/W typ).

Source-drain diode Qr (recovered charge) here is 20nC (25A, -100 A/µs, 0Vgs, 50Vds, 25°C junction).

Applications are foreseen in telecommunication, servers, industry, chargers, USB-PD and motor control.

The whole 80V and 100V low-spiking family can be found here