Power

Toshiba has launched a 200A 40V 0.66mΩmax automotive grade n-channel mosfet that can handle 600A pulses in a 7 x 8.44 x 2.3mm gull-wing package. “Automotive safety-critical applications such as steering, braking and autonomous driving systems generally require more devices than other systems to meet redundancy requirements. Here, a power mosfet with high current density is required due to the ...

Rohm has developed a range of five 100V dual mosfets for single-phase or three-phase bridges in fan motor drives. Four of them are dual n-channel in 5 x 6mm or 3.3 x 3.3mm packages, and one has one n-channel and one p-channel mosfet in the same 5 x 6mm package. “Recent years have seen a transition to higher voltages from ...

Ideal Power is aiming to compete with smart IGBT modules, with a 1.2kV 160A (100°C, 240A at 25°C) power module built around its novel ‘B-Tran’ bi-direction semiconductor switch. Called IPA01216DFx-HS, it comes in an industry-standard 62mm package which includes an isolated driver circuit and “has significant advantages compared to IGBT modules, including lower losses and inherent bidirectionality”, according to the ...

At Semicon Taiwan, Navitas Semiconductor announced GaNSafe, its fourth generation GaN technology. It is designed in a TOLL package to be rugged and protected in demanding environments and suitable for commercial applications in data centres, inverters in solar panels and onboard chargers in electric vehicles. The choice of a TOLL reduces the size compared to a QFN, explained Stephen Oliver, ...

A single capacitor can influence the lifetime and quality of entire electronic devices. These components wear out relatively easily and are used in virtually all circuits, including power supply modules, filters and voltage converters. Therefore, it is worth getting familiar with a range of brand-name components, such as Panasonic products, designed to ensure long-lasting and reliable operation. Nowadays, it is ...

Rohm has co-packaged a gate driver and a 650V GaN power transistor to ease the design of power supplies in servers and ac adaptors. “While GaN hemts are expected to contribute to greater miniaturisation and improved power conversion efficiency, the difficulty in handling the gate compared to silicon mosfets requires the use of a dedicated gate driver,” according to the ...

Toshiba has picked a four-pin package for its latest third-generation silicon carbide mosfets. “Devices in the TWxxxZxxxC series are the first Toshiba SiC products to be housed in a TO-247-4L(X) package with a fourth pin,” according to the company. “This allows the provision of a Kelvin connection of the signal source terminal for the gate drive, thereby reducing the parasitic ...

Navitas is claiming it can deliver 3,200W from a 40 x 73.5 x 185mm (544cm3) data centre power supply, which is 5.9W/cm3 and almost 100W/in3. Called CRPS185, it has a 1U CRPS (common redundant power supply) form-factor. Inside, the architecture starts with an interleaved CCM (continuous conduction mode) PFC (power factor corrector) and continues into a full-bridge LLC (inductor-inductor-capacitor) converter ...

Advancing electrical safety and energy efficiency with RCD and PMD technology integration. Bituo Technik, a Shanghai-based technology provider, has gained recognition as a leading supplier of Residual Current Devices (RCDs). Their expertise in RCDs is evident through the integration of type-A/F leakage current detection ICs and type-EV/B leakage current sensors into various electrical protection devices across Asia and Europe, including ...

Nexperia has created a dc-dc converter chip designed to extend the life of 3V primary coin cells in bursty IoT applications, such as those with pulsed radio transmitters. “The IC’s designed to extend the life of a typical non-rechargeable lithium coin cell battery while also increasing peak output current by up to 25x compared to what a typical coin cell ...