Cambridge GaN devices signs with Taiwan PSU institute to design USB-PD adaptors

Transistor maker Cambridge GaN Devices has signed a memorandum of understanding with Taiwan’s Industrial Technology Research Institute to develop USB-PD adaptors as well as to share international market information, visit to potential customers and promote the PSUs.

The agreement covers 140 – 240W, >30W/in³, ac-dc power adapters for e-mobility, power tools, notebooks and phones (prototype GaN-based USB PD adapter right)

“CGD’s IC-enhanced GaN is a novel platform that facilitates smart temperature control and enhances gate reliability. We are excited to include these benefits in our power designs,” said ITRI power design leader Wen-Tien Tsai.

“We are excited to partner with an organization with a research team that is experienced in developing power solutions and holds many patents,” said CGD CCO Andrea Bricconi. “We will be demonstrating some of their board designs at PCIM in Nuremberg in June. These utilise CGD’s unique IC architecture and ITRI’s designs.”

CGD products are monolithic GaN ICs (left) that include a power hemt alongside support circuitry including gate protection, gate drive voltage modification, Miller clamps and current sensing. It was was spun out from Cambridge University.

ITRI is an applied technology research institute founded in 1973 and now with over 6,000 employees. CGD is working with GEL, its Green Energy & Environment Research Laboratories.