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“The memories feature operation from 1.71V to 3.6V, support up to 54Mbit/s of throughput over a low-pin count interface and are available in a RoHS-compliant, 24ball FBGA package,” according to the company. “These products combine low-power operation with instant nonvolatility and unlimited read/write cycle endurance.”
It claimed read and write performance of equivalent to parallel-interface battery-backed static RAMs with 35ns access time.
For automotive use, only the larger 2Mbit x 8 size is available, qualified to AEC-Q100 automotive-grade 3 in two -40°C to +85°C versions with 40MHz SPI interfaces for operation over 1.71 – 1.89V or 1.8 to 3.6V. Data retention is describes as “151 year”. Typical power consumption is 2.7mA active at 40MHz, 14µA stand-by, 1.5µA power-down and 100nA hibernating.
Both sizes are available for industrial use, with a lot more variants: temperature range can be 0 to 70°C, -40 to +85°C or (only in 1Mbit x 8) -40 to 105°C, and the interface can be SPI (20, 40 or 50MHz) or QSPI (108MHz).
Serial and parallel FRAMs from Infineon cover 4kbit to 16Mbit and 1.8 to 5.5V operation with “virtually unlimited endurance of one-hundred trillion read and write cycles” suiting them to write-intensive applications.
16Mbit Automotive FRAM data sheet
