Industrial Electronics

Navitas Semiconductor has demonstrated a 4.5kW 54V server power supply using both GaN and SiC transistors. Claimed density is “over 130W/in3 with efficiency over 97%. The architecture replaces the standard four diode bridge (and boost power factor correction) at the front end with an active all-transistor circuit – a multi-phase totem pole power factor corrector. While often called ‘bridgeless’ because ...

Infineon Technologies has put 2kV silicon carbide mosfet die in its four lead TO-247PLUS-4-HCC package, aiming them at systems with dc links up to 1.5kV. “It is the first discrete silicon carbide device with a breakdown voltage of 2,000V on the market, with a creepage distance of 14mm and clearance distance of 5.4mm,” according to the company. “The devices are ...

May & Scofield manufacturers electronic controls and systems, and needed to fulfill a contract for automotive flex circuits which forbade hand soldering. It turned to capital equipment distributor Altus, which recommended Promation’s Quick 9434 four-axis soldering robot which for consistency, according to Altus, has closed-loop temperature control up to 500°C and a toothed gear solder wire feeder that also perforates the ...

At APEC 2024, Power Integrations‘ chairman and CEO, Balu Balakrishnan, “declared war on DC-DC post regulators”, as the company introduced the GaN-based InnoMux-2 switcher IC family. The company said that the new ICs are an example of its value and energy focus because it combines AC-DC and DC-DC stages into a single power converter, resulting in a reduction in power ...

Fortec Integrated has introduced a 3.5inch format single-board computer with a choice of Intel Raptor Lake processors. Made by Taiwanese company iBase, it is called IB961 and comes in four versions: i7 with 14cores (6 performance, 8 efficiency, 20 threads) i5 with 12 cores (4p, 8e 16t) i5 with 10 cores (2p, 8e, 12t) i3 with eight-cores (4p, 4e, 12t) ...

EPC is claiming “the lowest on-resistance GaN FET on the market” for its 1mΩ 100V EPC2361, which comes in a 3 x 5mm QFN package with top and bottom cooling. 1mΩ is at 50A 25°C with 5V on the gate, and rises to ~1.8mΩ at the max operating temperature of 150°C (minimum is -40°C). The preliminary data sheet has no ...

Analog Devices has created a stand-alone 100V half-bridge driver for GaN power hemts “with a propagation delay of 10ns and delay matching of 1.5ns between the top and bottom channels, making it suitable for high-frequency dc-dc converters, motor drivers and class-D audio amplifiers”, according to the company. Called LT8418, this IC looks very much like the output stage used within ...

Advanced Energy Industries is showing its NP08 4kW ac-dc power supply at APEC in Long Beach this week. The first member of its NeoPower (NP) family of configurable multi-output supplies, it has eight output slots for configuration and 18W/inch3 claimed density for ~283 x 203 x 64mm chassis. Input is single-phase 90 – 132Vac and 180 – 264Vac. “NP08 also ...

Microchip is aiming at motor control by combining a triple half-bridge mosfet gate driver, a 100MHz processor and CAN FD transceivers in the same IC. Other members of the family offer LIN transceivers instead of CAN, or a CAN interface without transceivers, or no CAN or LIN, and a base model has a 70MHz processor. Some have SENT interfaces for ...

Rohm has created a proprietary trench MOS structure for 100V Schottky diodes to improve the trade-off between forward voltage and reverse leakage. It has been used to create the YQ series of rectifier diodes, available in surface-mount packages from 0.5 x 1mm to TO-263 with ratings between 1A and 30A. Most of them are available with automotive qualification. Leakage is ...