1.2kV SiC mosfets in D2PAK-7

Nexperia has put 1,200V silicon carbide mosfet die into D2PAK-7 surface mount package, also known as TO-263-7.

Nexperia 1.2kV SiC mosfet in TO-263-7

“SiC switches in SMD packages like D2PAK-7 [are] becoming increasingly popular in industrial applications including electric vehicle charging, uninterruptible power supplies and inverters for solar and energy storage.”

NSF0xx120D7A0 is the SiC mosfet family name, and they come with different on-resistances:


  • NSF030120D7A0 30mΩ
  • NSF040120D7A0 40mΩ
  • NSF060120D7A0 60mΩ
  • NSF080120D7A0 80mΩ

Looking Picking the 30mΩ NSF030120D7A0: maximum on-resistance is 45mΩ (18Vg, 40A, 25°C). 30mΩ rises to ~59mΩ at 175°C (40A) – a 63% rise.


Recommended turn-off gate voltage is between -5V and 0V, and for turn-on the figures are 15 to 18V (on-state gate voltages below 13V are forbidden).

The inverse-parallel source drain diode drops 4.4V conducting 40A at 25°C (-5Vgate).

Max currents are 67A continuously through the channel at 25°C (47A at 100°C) or 160A pulsed. The diode can handle 54A at 25°C and 120A pulsed.

Find the 30mΩ NSF030120D7A0 product page here


Leave a Reply

Your email address will not be published. Required fields are marked *

*