PCIM: 650V SiC mosfets in 8x8mm TOLL and top-side cooled packaging

Infineon is putting 650V silicon carbide mosfet die into two packages with SO-type footprints: a thin (1.5mm) bottom-cooled 8 x 8mm leadless TO (TOLL – TO leadless), and 9.8 x 15 x 2.3mm 16 leg SO version with top-side cooling (‘TOLT’ package) (see photo).

Infineon 650V SiC mosfets TOLL and TOLT packages

Die with typical on-resistances of 20, 40, 50 or 60mΩ are available in either package, and there is a 15mΩ option in the top-side cooled package.

“The product family will be expanded by a more granular portfolio by the end of 2024,” according to the company.

Both packages offer a separate source connection for the gate drive.

As examples:

IMTA65R020M2H is the 20mΩ (24mΩ max) TOLL, with 0.36°C/W junction-to-case resistance.

Typical gate charge is 57nC and pulses up to 288A can be handled.

IMLT65R015M2H is the 14.5mΩ (typ) top-side-cooled TOLT, with 0.25°C/W junction-to-case resistance and up to 398A pulse handling.

Of both these devices, Infineon claims: 4.5V gate threshold voltage, robustness “against parasitic turn‑on even with 0V turn‑off gate voltage”, compatibility with bipolar driving schemes and “robust body diode operation under hard commutation events”.

Applications are foreseen in AI server, renewable energy and electric vehicle charger power supplies.

TOLL data sheet

TOLT data sheet

See them at PCIM in Nuremberg, 11 to 13 June, hall 7 stand 470 or 169 (not necessarily both stands).