PCIM: 600V silicon mosfets from Infineon, and GaN from 200mm wafers

Infineon has announced a flurry of new power products as a prelude to PCIM in Nuremberg next week, the latest of which is a family of 600V super-junction mosfets.

Its eighth generation, “the devices combine the best features of the 600V CoolMOS 7 series and are the successors to the P7, PFD7, C7, CFD7, G7 and S7 product families”, according to the company. “They are equipped with an integrated fast body diode [and] come in SMD QDPAK, TOLL and ThinTOLL 8 x 8 packages.”

With 10V gate driver, the company is claiming 18% lower gate charge for generation 8 compared with its CFD7 mosfets, and 33% lower than the P7. “At 400V, the product family offers a 50% lower output capacitance than CFD7 and P7,” it added. “Turn-off losses have been reduced by 12% [to CFD7 and P7] and the reverse recovery charge is 3% lower compared to CFD7.”

On top of this, 14 to 42% thermal performance improvement is claimed.

“With these features, the devices offer high efficiency in soft-switching topologies such as LLC and ZVS phase-shift full-bridge. They also provide excellent performance levels in PFC, TTF and other hard-switching topologies,” said Infineon.

Infineon will showcase the 600 V CoolMOS 8 SJ MOSFETs at the Infineon booth (Hall 7 / Booth 470) at PCIM 2024 in Nuremberg.

Another of its PCIM-preempting announcements is another generation of GaN hemt for use across 40 to 700V, made on 200mm wafers in two of its own foundries, Kulim in Malaysia and Villach in Austria.

The 650 V G5 family, scheduled for Q4, are gate-injection transistors for consumer, data center, industrial and solar applications. For introduction in Q3, G3 devices will be made at 60, 80, 100 and 120V for at motor drive, telecom, data center, solar and consumer applications. The 40V bi-directional GaN switches announced yesterday are from this G3 family.

Find infineon on stands 470 and 169 in hall 7 at PCIM in Nuremberg from 11 to 13 June.