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Tag Archives: power

Precision shunts from 1A to 6,000A

Bourns riedon_industrial shunts

Bourns has added six shunt resistor types its Riedon range, that it acquired in April last year when it bought Riedon Inc. Construction is with brass end-caps holding Manganin resistance elements. The latter has a temperature coefficient ~±15ppm/°C. Kelvin contacts are provided for the voltage output. Panel-mount RS resistors have values from 41.7μΩ to 20mΩ (±0.25%). There are sub-versions here: ...

DIN rail IEC surge protection for AC or DC power

Bourns 1430 1440 dc surge arrest DIN rail

Bourns is offering IEC-grade surge protection for ac or dc power rails with four DIN rail mount device series. 1270 series AC surge protection to IEC/EN 61643-11 Class I + Class II / T1+T2 1280 series the same, plus a thermal disconnector “that eliminates the need for up-stream over-current protection”, said Bourns. 1430 series DC surge protection to IEC/EN 61643-31 ...

80 and 100V mosfets in 5×6 and 8×8 LFPAK

Nexperia 100V mosfet cross section

Nexperia has introduced 80 and 100V mosfets in 5 x 6 and 8 x 8mm footprint LFPAK packaging with Rds(on) ranging from 1.8 to 15mΩ, or 2.07mΩ upwards for the 100V parts. “Many mosfet manufacturers focus on achieving high efficiency through low Qg(total) and low Qgd, when benchmarking the switching performance of their devices against alternative offerings,” said the company. ...

Modern twist on clockwork stores more energy

Forget exploiting carbon nanotubes electrochemically, and just wind them up like clockwork if you want to store energy. This is not quite the message that researchers at the University of Maryland Baltimore County are delivering, but it might as well be as a team from there is storing 2.1MJ/kg in twisted carbon nanotubes – more, weight-for-weight, than Li-ion chemistry can ...

A library just for power grid engineers with neural networks on their minds

Aaron Wilson ORNL

Oak Ridge National Laboratory has curated an open-access on-line library of waveforms from the US power grid for power engineers wanting to apply AI techniques to grid monitoring and control. “Researchers can search different variables, like the type of sensor or a description of the event – for example, a waveform that represents a blown transformer and its effect on ...

The last of the first of OpenHydro

OpenHydro rest rig decomissioning

The test rig for OpenHydro’s first tidal turbine is being decommissioned from the European Marine Energy Centre’s Fall of Warness off the island of Eday in the Orkneys. OpenHydro, now gone as a tidal turbine company, built the rig in 2006 for its proof-of-concept 250kW turbine, and it has stood in the water ever since. It has two steel columns ...

PCIM: 750V 4mΩ SiC jfet for circuit breakers in TOLL pacakge

Qorvo UJ4N075004L8S SiC jfet

Qorvo has picked depletion-mode (normally-on) silicon carbide JFET technology to build a 750V 4.3mΩ transistor for circuit breakers, and put it in a 10 x 12mm surface-mount TOLL package. “It was designed for circuit protection applications including solid-state circuit breakers, where low resistance, thermal performance and reliability are paramount,” according to the company. This “JFET can withstand high instantaneous junction ...

Cissoid intelligent SiC power modules for industrial EV

Cissoid SiC inverter AEV vehicle

Applied EV has picked Cissoid to supply silicon carbide based inverter modules for its autonomous electric vehicles. The module, CXT-ICM3SA, was introduced at APEC earlier this year and combines a three-phase 1.2kV SiC mosfet bridge – rated at 340 to 550A depending on model – a driver board and a control board in a stack. The control board is built ...

Infineon adds bi-directional GaN transistors

Infineon IGK080G041S 40V bidirection GaN transistor

Infineon has announced bi-directional GaN power transistors at 40, 650 and 850V, and a current sensing GaN transistor. There are two types of bi-directional transistor: The 650 and 850V devices are both normally-off monolithic gate-injection transistors with four operational modes via two separate gates and a substrate terminal, to deliver what the company calls ‘independent isolated control’. “They utilize the ...

PCIM: 650V SiC mosfets in 8x8mm TOLL and top-side cooled packaging

Infineon 650V SiC mosfets TOLL and TOLT packages

Infineon is putting 650V silicon carbide mosfet die into two packages with SO-type footprints: a thin (1.5mm) bottom-cooled 8 x 8mm leadless TO (TOLL – TO leadless), and 9.8 x 15 x 2.3mm 16 leg SO version with top-side cooling (‘TOLT’ package) (see photo). Die with typical on-resistances of 20, 40, 50 or 60mΩ are available in either package, and ...