Cissoid N-channel mosfet operates from -55°C up to +225°C

Cissoid has introduced an N-channel mosfet specified for operation from -55°C up to +225°C.

It is available in a thin dual flat pack (TDFP) hermetically-sealed ceramic surface mount package, measuring 5×5.5mm.

This transistor is capable of switching a current up to 1A (continuous) or blocking a voltage up to 80V with a drain cut-off current as low as 10µA at 225°C.

In repetitive pulse conditions, it is able to handle peak currents up to 3.3A at 225°C.

The NMOS8001 is a logic-level device, i.e. it can be directly driven by a 0-5V logic signal.

The gate is protected by anti-series diodes, with ESD rating up to 2KV HBM, allowing a negative gate-to-source bias which gives more flexibility to circuit designers.

With a static on-state resistance (RDS-ON) of 0.76? at 25°C (1.56? at 225°C) and a total switching energy of 413nJ (at 40V/1A), the CHT-NMOS8001 designed to offer a trade-off between conduction and switching losses for current switching in the range between 100mA and 500mA, e.g. in low-power low-voltage Flyback DC-DC converters.