Magnachip has come up with four new 40V MXT MV MOSFETs designed in PDFN 33 packages for automotive applications. PDFN33 packages reduce footprint by more than 60% and the weight by approximately 75% compared to PDFN56. Three of the devices – AMDV040N029LVRH, AMDV040N036LVRH, and AMDV040N042LVRH – have a gate threshold voltage of 1.8V. Magnachip’s New Automotive 40V MXT MV MOSFETs The key ...
Extended semiconductor lead-times will continue into H2, while automotive and industrial component order optimism and a resilient macroeconomic outlook will see a demand rebound starting in H2, says Supplyframe. Currently there are bloated inventories for components like memory, small case-size ceramic capacitors and automotive MCUs, but FPGAs, analogue ICs, power MOSFETs, MCUs and discretes remain constrained and costly. In Q3, ...
JEDEC has adopted a pair of top-side-cooled surface-mount packages created by Infineon for high-voltage mosfets. Dubbed QDPAK and DDPAK (in-use, below left), they are intended to replace through hole TO247 and TO220 (respectively) and “deliver equivalent thermal capabilities with improved electrical performance”, said Infineon. “JEDEC package registration, according to MO-354, serves as an enabler for the transition of high-voltage industrial ...
Magnachip has introduced its third- generation 200V Medium Voltage (MV) MOSFETs for Light Electric Vehicles (LEV) motor controllers and industrial power supplies. To maximize energy efficiency in power devices, Magnachip’s new 200V MOSFETs incorporate third-generation trench MOSFET technology. The capacitance was reduced by 50% compared to the previous generation 100V MV MOSFET and the enhanced design of the core cell ...
As billions of people around the world adopt more flexible lifestyles, stable connections to the cloud via Wi-Fi, 4G and 5G are vital, writes Mike Becker of Nexperia. To manage this, the growth in hyperscale computing solutions and high-speed 5G telecom systems continues unabated. At the same time operators are seeking to squeeze higher performance levels and improved efficiency into ...
Rohm has co-packaged n and p-channel mosfets with ±40V or ±60V withstand voltages to provide overhead for driving motors at 24V. “In recent years, mosfets are increasingly required to ensure sufficient margin against voltage fluctuations by providing 40V and 60V withstand voltages to support 24V input required for motors used in industrial equipment and base stations,” according to Rohm. “Furthermore, ...
The MOSFET market will have a 3.8% CAGR 2020-26 to reach $9.4 billion by 2026, reports Yole Developpement. Today the consumer market contributes 37% of silicon MOSFET revenues, making it the largest sector worth $2?8 billion. Automotive, including EV, will boost the demand for silicon power MOSFETs due to increasing adoption of auxiliary systems and electrification. Auxiliary motor drives boost ...
Vishay has introduced a 40V n-channel mosfet half-bridge for synchronous buck converters and motor drives with low on-resistance and gate charge. Called SiZ240DT, its two transistors are: Channel 1 (upper, switch) 8.05mΩ at 10V 12.25mΩ at 4.5 V 6.9nC gate charge (20V at 10A, Vg=4.5V) 48A at 25°C Channel 2 (lower, rectifier) 8.41mΩ at 10V 13.30mΩ at 4.5V 6.5nC gate ...
Vishay has introduced a 30V n-channel MOSFET half-bridge power stage that combines a high side TrenchFET and low side SkyFET in a 3.3 x 3.3mm package. The mosfets are optimised for their respective tasks in a buck converter (see table and diagram). One has a maximum on-resistance of 4.5mΩ at 10V (7.0mΩ at 4.5V) and typically 6.9nC gate charge, and ...
Rohm has signed a deal to develop silicon carbide electric vehicle drives with Vitesco Technologies. “Energy efficiency is of paramount importance in an electric vehicle,” said Vitesco v-p Thomas Stierle. “As the traction battery is the only source of energy in the vehicle, any losses caused by power conversion need to be minimised. We are therefore developing a SiC option within ...
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