Tag Archives: SiC

Aiming at vehicle traction, Infineon has put a pair of 3,300V 1,000A 1.9 mΩ silicon carbide trench mosfets into its 100 x 140 x 40mm ‘XHP 2’ module housing, calling the module FF2000UXTR33T2M1. This package is rated for 6kV testing, and achieves 2.6kV partial discharge extinction. Creepage is 40mm terminal to baseplate and 34mm between terminals. Clearance is 31 and ...

SemiQ has put 1,200V silicon carbide mosfet and Schottky diode half-bridges into standard ’62mm’ industrial power modules. There are four parts, each measuring 62 x 106.5 x 17mm (plus terminals): two mosfet hald-bridges and two Schottky half-bridges, aimed at new designs as well as efficiency-boosting replacements in legacy systems. 1.2kV 62mm power modules  Configuration Current Rds(on) GCMX003A120S7B1 SiC mosfet half-bridge ...

Onsemi has signed a multi-year deal to supply silicon carbide power assemblies to Volkswagen for its traction inverters. “The solution features silicon carbide-based technologies in an integrated module that can scale across all power levels, to be compatible for all vehicle categories,” according to Onsemi. It will have three integrated half-bridge modules mounted on a liquid cooling channel. “We are very ...

The Bugatti Tourbillon, announced yesterday, is a hybrid, with 800hp spread across three electric motors in addition to its 1,000hp 8.3 litre Cosworth V16 petrol engine. Two of the electric motors are part of the front axle system, and the other one is part of the rear axle assembly. Powered them is a 800V 25kWh oil-cooled battery housed in the ...

ST was the No.1 supplier of SiC devices last year with a 32.6% market share. The top five suppliers took approximately 91.9% of total revenue. onsemi rose from fourth place in 2022 to second place. While last year’s market was driven by EVs, the slowdown in EV sales growth  is affecting the SiC device market which TrendForce expects to “significantly ...

Qorvo has picked depletion-mode (normally-on) silicon carbide JFET technology to build a 750V 4.3mΩ transistor for circuit breakers, and put it in a 10 x 12mm surface-mount TOLL package. “It was designed for circuit protection applications including solid-state circuit breakers, where low resistance, thermal performance and reliability are paramount,” according to the company. This “JFET can withstand high instantaneous junction ...

Applied EV has picked Cissoid to supply silicon carbide based inverter modules for its autonomous electric vehicles. The module, CXT-ICM3SA, was introduced at APEC earlier this year and combines a three-phase 1.2kV SiC mosfet bridge – rated at 340 to 550A depending on model – a driver board and a control board in a stack. The control board is built ...

Microchip has turned to silicon carbide to create a bi-directional electric vehicle on-board charger design for 400V or 800V batteries. There are two halves: a 7.6kW bi-directional two-phase interleaved totem-pole power factor corrector, and an 11kW dual full bridge transformer-coupled bi-directional dc-dc converter. “These two designs work together,” Microchip told Electronics Weekly. “At PCIM we showed both operating in bi-directional ...

Navitas Semiconductor has made fast versions of its Gen-3 650 and 1,200V silicon carbide mosfets, branded ‘G3F’ and available in packages including D2PAK-7 to TO-247-4. “We’re pushing the boundaries of SiC, with up to 600kHz switching speeds said company v-p of technology Sid Sundaresan. One proposed application is in continuous-conduction-mode totem-pole power factor correction (CCM TPPFC) circuits up to 10kW in ...

Asahi Kasei Microdevices (AKM) and Silicon Austria Labs (SAL), have conducted a joint proof of concept for eFuse technology in high-voltage applications using SiC-based power devices. The results show that eFuse technology can significantly improve safety and reduce the material and maintenance costs of systems such as on-board chargers (OBC) in motor vehicles. SiC and GaN-based power electronics are increasingly ...