Tag Archives: mosfet

Aiming at vehicle traction, Infineon has put a pair of 3,300V 1,000A 1.9 mΩ silicon carbide trench mosfets into its 100 x 140 x 40mm ‘XHP 2’ module housing, calling the module FF2000UXTR33T2M1. This package is rated for 6kV testing, and achieves 2.6kV partial discharge extinction. Creepage is 40mm terminal to baseplate and 34mm between terminals. Clearance is 31 and ...

Infineon has announced seven 30V mosfets in TO-220 packaging. They are part of its StrongIRfet 2 family, which are less qualified that its industrially-rated Optimos devices. “The new power mosfets were designed to meet the requirements of mass market applications – switched-mode power supplies, motor drives, battery management systems and uninterruptible power supplies,” it said. Resistance and gate charge improvements ...

Nexperia has put more single and dual small-signal mosfets into DFN1110D-3 (SOT8015) and DFN1412-6 (SOT1268) packages, with side-wettable flanks for automated optical inspection. “The 1.1 x 1mm DFN1110D-3 package has seen increasingly wide adoption, and is quickly becoming the de-facto industry standard package for small-signal mosfets and bipolar transistors intended for use in automotive applications,” according to the company. “Superior ...

SemiQ has put 1,200V silicon carbide mosfet and Schottky diode half-bridges into standard ’62mm’ industrial power modules. There are four parts, each measuring 62 x 106.5 x 17mm (plus terminals): two mosfet hald-bridges and two Schottky half-bridges, aimed at new designs as well as efficiency-boosting replacements in legacy systems. 1.2kV 62mm power modules  Configuration Current Rds(on) GCMX003A120S7B1 SiC mosfet half-bridge ...

Nexperia has introduced 80 and 100V mosfets in 5 x 6 and 8 x 8mm footprint LFPAK packaging with Rds(on) ranging from 1.8 to 15mΩ, or 2.07mΩ upwards for the 100V parts. “Many mosfet manufacturers focus on achieving high efficiency through low Qg(total) and low Qgd, when benchmarking the switching performance of their devices against alternative offerings,” said the company. ...

Taiwan Semiconductor has introduced ten AEC-Q101-qualified small-signal mosfets. There are seven n-channel parts (including two duals), and three p-channel parts (one dual) in the ‘TQM’ line – see the table below. Three packages are used: SOT-236, SOT-363 or SOT-323, and they are rated for >2kV ESD withstanding. “In addition to automotive applications, these small-footprint MOSFETs are ideal for high-reliability commercial designs ...

Infineon is aiming at 48V automotive applications with AUCN08S7N013, an 80V mosfet in a 5 x 6mm SSO8 that has a maximum on-resistance of 1.3mΩ at 25°C (Tj, 10Vgs, 88A Id). “48V applications including electric power steering, braking systems, power switches in zone architectures, battery management, e-fuse boxes, dc-dc and brushless dc motor drives,” it said. The mosfet is several ...

Navitas Semiconductor has made fast versions of its Gen-3 650 and 1,200V silicon carbide mosfets, branded ‘G3F’ and available in packages including D2PAK-7 to TO-247-4. “We’re pushing the boundaries of SiC, with up to 600kHz switching speeds said company v-p of technology Sid Sundaresan. One proposed application is in continuous-conduction-mode totem-pole power factor correction (CCM TPPFC) circuits up to 10kW in ...

Infineon has announced a flurry of new power products as a prelude to PCIM in Nuremberg next week, the latest of which is a family of 600V super-junction mosfets. Its eighth generation, “the devices combine the best features of the 600V CoolMOS 7 series and are the successors to the P7, PFD7, C7, CFD7, G7 and S7 product families”, according ...

Infineon is putting 650V silicon carbide mosfet die into two packages with SO-type footprints: a thin (1.5mm) bottom-cooled 8 x 8mm leadless TO (TOLL – TO leadless), and 9.8 x 15 x 2.3mm 16 leg SO version with top-side cooling (‘TOLT’ package) (see photo). Die with typical on-resistances of 20, 40, 50 or 60mΩ are available in either package, and ...