Home » Tag Archives: memory

Tag Archives: memory

Switch to scandium for high temperature ferroelectrics

TokyoTech scandium ferroelectric

Tokyo Tech has picked aluminium scandium nitride (AlScN) to make ferroelectric films that remain stable at up to 600°C in hydrogen. “This high stability makes them ideal for high-temperature manufacturing processes under the H2-included atmosphere used in fabricating advanced memory devices,” said the university. “Compared to existing ferroelectric materials, these films maintain their ferroelectric properties and crystal structure even after ...

DigiKey signs Kingston for memory components and SSD storage

Kingston-DigiKey-memory-300x200.jpg

DigiKey is partnering with memory manufacturer Kingston Technology to distribute its memory and storage systems globally. Kingston options including eMMC, eMCP, ePoP, UFS and DRAM components for industrial and embedded OEM customers. The company also provides an industrial SSD line of SATA and NVMe solid state drives (SSDs). These are created for system designers and builders. End user applications cover ...

Embedded World: Video Interview – Winbond on securing memory

Winbond-EW-Video-interview-300x180.jpg

We caught up with the Winbond team at Embedded World 2024 as part of our promotional coverage for the event. Jun Kawaguchi, Steam Lin and Tetsu Ho – discuss longevity for industrial memory, security for small form factor devices, their Fabs in Taiwan, and Winbond OctalNAND Flash… Jun Kawaguchi covers, for example, the company’s W77Q, a security flash memory with ...

Fraunhofer IESE partners for AI chip network-on-chip architecture

Arteris FlexNoC graphic

Faster on-die memory access for AI processing could spring from a collaboration between network-on-chip intellectual property company Arteris and the Fraunhofer Institute for Experimental Software Engineering (Fraunhofer IESE). Memory access is important with neural network algorithms as their execution requires large quantities of data to be transferred between processing elements and memory, increasing emphasis on the performance of the access ...

2D ferroelectric memory transistor demonstrated

TokyoTech ferroelectric memory diag

Researchers at Tokyo Tech have made a lateral ferroelectric memory transistor using a 2D material. They picked α-In2Se3, which is “renowned for high carrier mobility, tunable bandgap and strong ferroelectric properties at the atomic level, making it ideal for high-speed memory applications”, according to the university. The bottom-contact transistor has been made by dropping a flake (~29nm thick) of α-In2Se3 ...

ISSCC 2023: 1.7Tbit flash IC has five bits per cell

ISSCC28.1 Intel 192 layer 5bitcell 1.7Tbit flash

Intel has made a move from four bits per cell to demonstrate a 1.7Tbit NAND flash IC, which it described at ISSCC 2023 this week. Fabricated over 192 layers (cross section, right) of floating gates, the actual capacity is 1.67Tbit, spread over 73.3mm2 – equating to 23.3Gb/mm2 – which can be down-shifted to 1.33Tbit 4bit/cell (18.6Gb/mm2) or 1Tbit 3bit/cell (14.0Gb/mm2) – ...

16Mbit FRAM for automotive and industry

Infineon 8Mbit 16Mbit FRAM in 24ball FBGA

Infineon Technologies is taking orders for 8 and 16Mbit FRAM (ferroelectric RAM) aimed at automotive and industrial non-volatile data-logging. “The memories feature operation from 1.71V to 3.6V, support up to 54Mbit/s of throughput over a low-pin count interface and are available in a RoHS-compliant, 24ball FBGA package,” according to the company. “These products combine low-power operation with instant nonvolatility and ...

Image sensor shifter uses shape memory alloy

CambridgeMechatronics image sensor shifter

Cambridge Mechatronics (CML) has used shape memory alloy to create an image sensor shifter for five-axis optical image stabilisation in phones. “The main challenge in sensor shift is the requirement to move the image sensor whilst simultaneously connecting it to the handset,” according to the company. “Traditional voice coil motors are limited in the force they can generate. Additionally, voice ...

Longsys completes IPO and ChiNext listing

Longsys-listing-300x200.jpg

Memory specialists Shenzhen Longsys Electronics has officially completed its IPO, being listed on the Shenzhen Stock Exchange (SZSE). A group of company executives and guests attended the ceremony at the exchange and rang its opening bell (pictured). In his speech, chairman and CEO Huabo Cai said that being listed on ChiNext was an important milestone for Longsys’s development – “a ...