Tag Archives: silicon carbide

Aiming at vehicle traction, Infineon has put a pair of 3,300V 1,000A 1.9 mΩ silicon carbide trench mosfets into its 100 x 140 x 40mm ‘XHP 2’ module housing, calling the module FF2000UXTR33T2M1. This package is rated for 6kV testing, and achieves 2.6kV partial discharge extinction. Creepage is 40mm terminal to baseplate and 34mm between terminals. Clearance is 31 and ...

Onsemi has announced a 112 x 62mm power module for flying capacitor boost converters up to 1kV. It combines 1kV silicon IGBTs and 1.2kV silicon carbide diodes in the company’s F5BP package. Called NXH500B100H7F5SHG, it can handle continuous collector currents up to 210A (630A pulsed) (Tj = 175°C). Abs max power dissipation is 305W. To reducing stray inductance and thermal ...

SemiQ has put 1,200V silicon carbide mosfet and Schottky diode half-bridges into standard ’62mm’ industrial power modules. There are four parts, each measuring 62 x 106.5 x 17mm (plus terminals): two mosfet hald-bridges and two Schottky half-bridges, aimed at new designs as well as efficiency-boosting replacements in legacy systems. 1.2kV 62mm power modules  Configuration Current Rds(on) GCMX003A120S7B1 SiC mosfet half-bridge ...

Onsemi has signed a multi-year deal to supply silicon carbide power assemblies to Volkswagen for its traction inverters. “The solution features silicon carbide-based technologies in an integrated module that can scale across all power levels, to be compatible for all vehicle categories,” according to Onsemi. It will have three integrated half-bridge modules mounted on a liquid cooling channel. “We are very ...

The Bugatti Tourbillon, announced yesterday, is a hybrid, with 800hp spread across three electric motors in addition to its 1,000hp 8.3 litre Cosworth V16 petrol engine. Two of the electric motors are part of the front axle system, and the other one is part of the rear axle assembly. Powered them is a 800V 25kWh oil-cooled battery housed in the ...

Qorvo has picked depletion-mode (normally-on) silicon carbide JFET technology to build a 750V 4.3mΩ transistor for circuit breakers, and put it in a 10 x 12mm surface-mount TOLL package. “It was designed for circuit protection applications including solid-state circuit breakers, where low resistance, thermal performance and reliability are paramount,” according to the company. This “JFET can withstand high instantaneous junction ...

Applied EV has picked Cissoid to supply silicon carbide based inverter modules for its autonomous electric vehicles. The module, CXT-ICM3SA, was introduced at APEC earlier this year and combines a three-phase 1.2kV SiC mosfet bridge – rated at 340 to 550A depending on model – a driver board and a control board in a stack. The control board is built ...

Microchip has turned to silicon carbide to create a bi-directional electric vehicle on-board charger design for 400V or 800V batteries. There are two halves: a 7.6kW bi-directional two-phase interleaved totem-pole power factor corrector, and an 11kW dual full bridge transformer-coupled bi-directional dc-dc converter. “These two designs work together,” Microchip told Electronics Weekly. “At PCIM we showed both operating in bi-directional ...

Navitas Semiconductor has made fast versions of its Gen-3 650 and 1,200V silicon carbide mosfets, branded ‘G3F’ and available in packages including D2PAK-7 to TO-247-4. “We’re pushing the boundaries of SiC, with up to 600kHz switching speeds said company v-p of technology Sid Sundaresan. One proposed application is in continuous-conduction-mode totem-pole power factor correction (CCM TPPFC) circuits up to 10kW in ...

Infineon is putting 650V silicon carbide mosfet die into two packages with SO-type footprints: a thin (1.5mm) bottom-cooled 8 x 8mm leadless TO (TOLL – TO leadless), and 9.8 x 15 x 2.3mm 16 leg SO version with top-side cooling (‘TOLT’ package) (see photo). Die with typical on-resistances of 20, 40, 50 or 60mΩ are available in either package, and ...