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Tag Archives: silicon

112 x 62mm IGBT module for 1kV flying capacitor boost converters

Onsemi NXH500B100H7F5SHG IGBT boost module

Onsemi has announced a 112 x 62mm power module for flying capacitor boost converters up to 1kV. It combines 1kV silicon IGBTs and 1.2kV silicon carbide diodes in the company’s F5BP package. Called NXH500B100H7F5SHG, it can handle continuous collector currents up to 210A (630A pulsed) (Tj = 175°C). Abs max power dissipation is 305W. To reducing stray inductance and thermal ...

80 and 100V mosfets in 5×6 and 8×8 LFPAK

Nexperia 100V mosfet cross section

Nexperia has introduced 80 and 100V mosfets in 5 x 6 and 8 x 8mm footprint LFPAK packaging with Rds(on) ranging from 1.8 to 15mΩ, or 2.07mΩ upwards for the 100V parts. “Many mosfet manufacturers focus on achieving high efficiency through low Qg(total) and low Qgd, when benchmarking the switching performance of their devices against alternative offerings,” said the company. ...

300mm silicon-based quantum dot spin qubits

Imec-Si spin qubits manufactured with 300mm

Imec has used 300mm wafers to demonstrate silicon-based quantum dot spin qubit processing. The devices had an average charge noise of 0.6µeV/√Hz at 1Hz. “In view of noise performance, the values obtained are the lowest charge noise values achieved on a 300mm fab-compatible platform,” according to the Belgian research lab. “By demonstrating those values, repeatedly and reproducibly this work makes ...

PCIM: 600V silicon mosfets from Infineon, and GaN from 200mm wafers

Infineon G3 G5 GaN transistors

Infineon has announced a flurry of new power products as a prelude to PCIM in Nuremberg next week, the latest of which is a family of 600V super-junction mosfets. Its eighth generation, “the devices combine the best features of the 600V CoolMOS 7 series and are the successors to the P7, PFD7, C7, CFD7, G7 and S7 product families”, according ...

16.6μF <1pH silicon capacitor for IC interposers

EmpowerSemi EC1005P silicon capacitor

Empower Semiconductor is aiming at high-performance decoupling within IC substrates and interposers with its largest silicon capacitor yet, the 16.6μF EC1005P. “The performance of SoCs and other large computing processors are constantly increasing, said  Empower marketing manager Mukund Krishna. “It is becoming increasingly difficult to reach the level of power integrity and voltage regulation that these devices require with conventional ...

Oxford PV claims record for perovskite-silicon solar panel

Oxford-PV_17000m2-industrial-site_Brandenburg-an-der-Havel-Germany-

Oxford PV is claiming an efficiency record for solar panels based on perovskite-on-silicon tandem photovoltaic cells. “Produced in collaboration with the Fraunhofer Institute for Solar Energy Systems, the panel achieved a record 25% conversion efficiency, a significant increase on the more typical 24% efficiency of commercial modules,” according to the company. The panel was made using equipment and expertise at ...

Silicon trench capacitors save space in wearables

Rohm silicon trench capacitor

Rohm has developed its first silicon capacitors, the 400 x 200 x 185μm ( 01005, 0402 metric) BTD1RVFL series which covers 100pF to 1nF. “The mounting area is reduced by approximately 55% over general 0201 [0603 metric] products to just 0.08mm2.” according to the company. “Moreover, a built-in transient voltage suppressor protection element ensures high ESD resistance.” They are rated ...

500Wh/kg and 1,300Wh/litre from lithium ion cells

Amprius silicon anode lithoum ion diag

Amprius Technologies of California is claiming energy density of 500Wh/kg and 1.3kWh/litre from its latest demonstration of lithium-ion battery technology. This is about double the capacity of today’s general purpose cells. “The energy density performance was verified by [test house] Mobile Power Solutions. The results indicate that this cell model provides >504Wh/kg and >1,321Wh/litre at 25°C,” according to Amprius. This ...

1.7µm and 2.6µm linear InGaAs PIN diodes

Marktech Optoelectronics atlas PIN diode

As alternatives to through-hole TO-39 or TO-18 packaged PIN diodes, Marktech Optoelectronics has announced hermetic surface-mount InGaAs PIN diodes sensitive to 1.7 or 2.6μm, protected against water vapour, oxygen and other gaseous contaminants. “The Atlas brand package is designed to deliver performance and reliability for applications including aerospace, medical, defence, wearables and industrial,” according to New York-based Marktech. “In addition, ...

ISSCC: Cunning one-chip mains PSU needs only external passives

ISSCC 14.2

At ISSCC 2022, the Leibniz University of Hannover presented a novel 50-60Hz universal mains ac-dc power supply that has almost all of its components on a single 3 x 7mm 0.18μm silicon-on-insulator die. The only external components are the output inductor and capacitor, both low-voltage parts. It can produce an adjustable 3.3 to 10Vdc from 15 to 325V ac or ...