Tag Archives: IGBT

BEC Distribution has announced the availability of high-quality Alternatives for STMicroelectronics and onsemi IGBT Transistors. They are available on a 4-6 weeks lead time with free samples provided on request. BEC’s Insulated Gate Bipolar Transistors (IGBTs) provide maximum reliability combined with high-voltage, high-current characteristics. They feature a low saturation voltage and a high current capability combined with controlled junction temperatures ...

Onsemi has announced a 112 x 62mm power module for flying capacitor boost converters up to 1kV. It combines 1kV silicon IGBTs and 1.2kV silicon carbide diodes in the company’s F5BP package. Called NXH500B100H7F5SHG, it can handle continuous collector currents up to 210A (630A pulsed) (Tj = 175°C). Abs max power dissipation is 305W. To reducing stray inductance and thermal ...

Toshiba is aiming at air conditioners, air purifiers and pumps with an IGBT-based brush-less dc motor driver, suitable for sine-wave generation, in a ~13 x 33mm through-hole HDIP30 package. TPD4165K, as it will be know, can handle a maximum output of 3A, compared with 2A for the company’s earlier TPD4163K or TPD4164K. Absolute maximum input voltage has been raised to ...

Shanghai-based WeEn Semiconductors unveiled 650V and 1,200V IGBTs with fast recovery anti-parallel diodes at PCIM in Nuremberg. “Based on fine trench gate field-stop technology, the IGBTs provide a more uniform electric field within the chip, support higher breakdown voltages and offer improved dynamic control,” according to the company. “A positive temperature coefficient simplifies parallel operation.” Ratings are 650V 75A, 1.2kV ...

Ideal Power is aiming to compete with smart IGBT modules, with a 1.2kV 160A (100°C, 240A at 25°C) power module built around its novel ‘B-Tran’ bi-direction semiconductor switch. Called IPA01216DFx-HS, it comes in an industry-standard 62mm package which includes an isolated driver circuit and “has significant advantages compared to IGBT modules, including lower losses and inherent bidirectionality”, according to the ...

Infineon recently released 650V H variants of its gen 7 IGBTs, without a lot of detail on how they differ from the rest of gen 7, so Electronics Weekly got in touch. H brings the total to three gen 7 classes in two voltage ranges: H7 in 650V and 1.2kV, T7 in in 650V and 1.2kV, and S7 in 1.2kV. ...

Nexperia has entered the IGBT market, with a 600V 30A device, to be followed by 40, 50 and 75A types. “IGBT is a relatively mature technology,” said the company. “Nonetheless, the market for these devices is expected to grow in line with the increased adoption of solar panels and electric vehicle chargers. Nexperia’s 600V IGBTs feature a carrier-stored trench-gate field-stop ...

Infineon Technologies is aiming at 1,200V 10kW loads with a family of half-bridge gate drivers for IGBTs and silicon carbide mosfets. Called the 2ED132xS12x family, they are ruggedised by protection against negative voltage transient, shoot-through and automatic (±5%) over-current shut-down, and have under-voltage lock-out. Over-current detection to output shut-down, can be as short at 1μs. The use of a silicon-on-insulator ...

Toshiba is aiming at 60kHz power factor correction stages with a 650V 60A reduced switching loss IGBT. “Using previous generation IGBTs, the PFC stage of air conditioners would have an operating frequency below 40kHz,” it said. The new device, GT30J65MRB, comes in a TO-3P(N) and typically dissipates 350μJ when turning off at 175°C “an improvement of at least 40% when ...

Infineon Technologies has introduced a single power module that can handle up to 352kW in three-level solar string inverter applications. Called F3L600R10W4S7F_C22, and aimed at for 1.5kVdc inverters, it combines six 950V IGBTs with six silicon carbide diodes for an overall rating of 950V and 600A. Packaging is the company’s recently-introduced EasyPack 4B (below left), now its largest ‘Easy’-branded package, ...