VETH100A1DD1 is a bidirectional ESD protection diode for automotive Ethernet, compliant with OPEN Alliance 100Base-T1 and 1000Base-T1. Made by Vishay, it comes in a wettable flank DFN1006-2B package measuring 1 x 0.6 x 0.45mm. Working range is ±24V, and clamping is typically at 31V for 1A, “a result of its snap-back technology with a trigger voltage >100V”, said the company. ...
Onsemi has announced a 112 x 62mm power module for flying capacitor boost converters up to 1kV. It combines 1kV silicon IGBTs and 1.2kV silicon carbide diodes in the company’s F5BP package. Called NXH500B100H7F5SHG, it can handle continuous collector currents up to 210A (630A pulsed) (Tj = 175°C). Abs max power dissipation is 305W. To reducing stray inductance and thermal ...
It seems to be Ideal Diode Week at Electronics Weekly (here and here) as Diodes is also promoting one, this time an ideal diode that can cope with ±65V on its input and drops only 20mV when conducting. The automotive-compliant AP74700Q operates down to 3.2V (or 3.9V at start-up) to allow for cold cranking of a vehicle engine. Inside, a ...
Nexperia has put an ideal diode, including its p-channel mosfet, and reverse polarity protection, in a 2.1 x 1.25 x 0.95mm TSSOP6 package. Called NID5100, it is aimed at industrial and consumer applications, and has an automotive-qualified cousin named NID5100-Q100. “NID5100 supports ‘OR-ing’ multiple power supplies while retaining reverse polarity protection and provides fast response time for smooth power transfer,” ...
YouTube presented me with a video* about a reverse polarity protection IC, On Semi’s NCV68261, which can also be an ideal diode and a load controller. And, being partial to a nice ideal diode, I thought I would take a look. It is a neat chip, called NCV68261 and measuring 2 x 2mm. Acting on the high-side, it is designed ...
Silicon carbide chip company SemiQ has begun a known-good-die screening program for SiC mosfets “that delivers electrically sorted and optically inspected SiC technology ready for back-end processing and direct die attachment”, it said. It covers 1,200V 20 (pictured), 40 or 80mΩ mosfet die (119, 63 or 35A at 25°C respectively). “Our known-good-die SiC mosfets provide performance advantages such as near-constant ...
Hamamatsu Photonics has launched a TO-8 canned SPAD (single photon avalanche photodiode) with an in-built thermoelectric cooler. Called S16835, there are two models, which differ in the width* of their sensors: 54µm or 100µm. In standard operating conditions (25°C ambient, -20°C SPAD) typical dark currents are 15 or 60 count/s respectively (50 or 200 count/s max). Terminal capacitance and gain ...
A new technique applied to avalanche photodiodes improves the operating range or sampling rate of OTDRs, says Ben White. An optical time-domain reflectometer (OTDR) is a fibre optic network test instrument that measures the characteristics of an optical fibre. It can determine the fibre’s length and attenuation and detect a variety of fault types. The network test instrument works by ...
Rohm has created a proprietary trench MOS structure for 100V Schottky diodes to improve the trade-off between forward voltage and reverse leakage. It has been used to create the YQ series of rectifier diodes, available in surface-mount packages from 0.5 x 1mm to TO-263 with ratings between 1A and 30A. Most of them are available with automotive qualification. Leakage is ...
Rutronik is adding 600 V and 1200 V FREDs (fast recovery epitaxial diodes) from Panjit of Taiwan to its portfolio. Panjit FREDs come in two classes: Optima (low forward voltage) and Speedy (low reverse recovery time). They “are ideal for rectifier or freewheeling circuits in a wide range of power applications, such as UPS systems or data centers, but also ...
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