Infineon has developed 300mm power GaN wafers which deliver 2.3x more ICs per wafer than 200mm. “This remarkable success is the result of our innovative strength and the dedicated work of our global team to demonstrate our position as the innovation leader in GaN and power systems,” says Infineon CEO Jochen Hanebeck (pictured), “the technological breakthrough will be an industry ...
ESMC – a jv between TSMC, Bosch, Infineon and NXP – broke ground for its first fab in Dresden yesterday, with the EU announcing it had approved a €5 billion subsidy from the German government for the €10 billion project. ”Together with our partners, Bosch, Infineon and NXP, we are building our Dresden facility to meet the semiconductor needs of ...
Infineon Technologies is to integrate 600 and 700V GaN power hemts alongside gate driver chips inside single packages, in 5 x 6mm or 6 x 8mm SMD packages. IGI70NxxxA2xS is to be a 700V range that combines a single GaN transistor with a single-channel driver in 5 x 6mm PQFN with with 140 to 500mΩ options (IGI70NxxxA2PS), or 6 x ...
The Synergy of Infineon’s Power CoolMOS, CoolGaN, and CoolSiC Series with YMIN Capacitors’ Technology! In June 2024, Infineon recently launched a series of new products, including the 600 V CoolMOS™ 8 SJ MOSFET, CoolGaN™ bidirectional switch and CoolGaN Smart Sense, and CoolSiC™ MOSFET 650 V G2. These products aim to enhance the performance and cost-effectiveness of power systems, making them ...
Infineon is putting 650V silicon carbide mosfet die into two packages with SO-type footprints: a thin (1.5mm) bottom-cooled 8 x 8mm leadless TO (TOLL – TO leadless), and 9.8 x 15 x 2.3mm 16 leg SO version with top-side cooling (‘TOLT’ package) (see photo). Die with typical on-resistances of 20, 40, 50 or 60mΩ are available in either package, and ...
The most popular stories involve market forecasts for Q1, HBM’s share of total DRAM, revenue falling at Infineon, revenue increasing at ARM, and reports that Graphcore, the Bristol IPU developer, is in talks with Softbank...
Infineon is aiming at automotive power control with a 5 x 7mm top-side cooled surface-mount package, pitching it against the 5 x 6mm bottom-cooled SSO8. The package, SSO10T, has a 10μm gap instead of a thermal pad on the PCB side, and around 95% of heat will leave through the top, according to the company, typically to the ECU housing ...
Infineon and Honda have signed an MoU to collaborate in power semiconductors, ADAS, and E/E architectures, where both parties will collaborate on new architecture concepts. Infineon will become Honda’s semiconductor partner to align future product and technology roadmaps. The two companies also agreed to continue discussions on supply stability, as well as to encourage transferring mutual knowledge and collaborate on ...
Infineon and GlobalFoundries have agreed a supply deal for Infineon’s AURIX TC3x 40nm automotive MCUs, PMICs and connectivity ICs. The additional capacity will help secure Infineon’s business growth from 2024 through 2030. Infineon and GF have been partnering since 2013 in the development of differentiated automotive, industrial and security semiconductor technology and products. At the centre of this collaboration ...
Infineon has introduced a magnetic sensor for micron-level movement measurement. Called TLI5590-A6W, it has two TMR (tunnel magneto-resistance) Wheatstone bridges inside (see diagram), spaced 500μm apart so that they deliver sine and cosine voltages when moved relative to long magnets, or circular magnets, whose poles change every 500μm in the working direction. “Qualified for industrial and consumer applications to JEDEC ...
Electronics Weekly Electronics Design & Components Tech News
