Infineon has announced a 5V version of its compact (13.8 x 14 x 7.5mm) CO2 sensor. “The sensor is based on the photoacoustic spectroscopy principle, where CO2 molecules within the sensor cavity absorb infrared light, generating small pressure changes that are detected by an acoustic detector,” according to the company. “CO2 concentration is then delivered in the form of ...
Tag Archives: Infineon
SiC half-bridge handles 1.8MW in under 500ns
Aiming at vehicle traction, Infineon has put a pair of 3,300V 1,000A 1.9 mΩ silicon carbide trench mosfets into its 100 x 140 x 40mm ‘XHP 2’ module housing, calling the module FF2000UXTR33T2M1. This package is rated for 6kV testing, and achieves 2.6kV partial discharge extinction. Creepage is 40mm terminal to baseplate and 34mm between terminals. Clearance is 31 and ...
30V TO-220 mosfets from Infineon
Infineon has announced seven 30V mosfets in TO-220 packaging. They are part of its StrongIRfet 2 family, which are less qualified that its industrially-rated Optimos devices. “The new power mosfets were designed to meet the requirements of mass market applications – switched-mode power supplies, motor drives, battery management systems and uninterruptible power supplies,” it said. Resistance and gate charge improvements ...
Automotive voltage regulator with reset and watchdog
Infineon has introduced six automotive linear regulators, protected against 40 or 45V, and supplying 3.3 or 5V at up 500mA, some with enable, watchdog or reset circuits (see the table below). Picking the TLS820F3ELV50 as an example, it has an input range of 3 to 42V (45V abs max) and outputs 5V ±2% at up to 200mA. “These regulators are ...
800V three phase motor drivers up to 20A or 4kW
Infineon is aiming to drive motors up to 4kW with a series of integrated three-phase IGBT motor drivers. There are three: IM12B10CC1 800V 10A 2.2kW IM12B15CC1 800V 15A 3kW IM12B20EC1 800V 20A 4kW Each comes in the same 36 x 23mm DIP package and includes six 1,200V IGBTs, six anti-parallel diodes, and a protected level-shifting gate driver compatible with logic-level ...
Autosar tool trial for Infineon TC4x automotive processors
HighTec EDV-Systeme has announced a time-limited evaluation bundle for Autosar-based development using Infineon’s TC4x automotive processors, created with Infineon. In Autosar development, besides a run-time environment and an application layer, ‘basic software’ is needed – which consists of pre-defined modules that are summarised in layers. The layers are intended to make it easier to migrate software to different hardware. One of these ...
Infineon and Swoboda tie-up to make current sensors
Infineon and Swoboda are developing current sensor modules for automotive traction inverters and battery management systems. The deal combines Infineon’s sensor ICs with Swoboda’s expertise in sensor modules, and the first product (photo right) is aimed specifically at Infineon’s ‘HybridPACK Drive G2’ three-phase traction motor drive modules. Later models will cover more general applications. The infineon-specific model is called the ...
PCIM: Infineon’s 1.3mΩ 80V mosfet in SS08
Infineon is aiming at 48V automotive applications with AUCN08S7N013, an 80V mosfet in a 5 x 6mm SSO8 that has a maximum on-resistance of 1.3mΩ at 25°C (Tj, 10Vgs, 88A Id). “48V applications including electric power steering, braking systems, power switches in zone architectures, battery management, e-fuse boxes, dc-dc and brushless dc motor drives,” it said. The mosfet is several ...
PCIM: 600V silicon mosfets from Infineon, and GaN from 200mm wafers
Infineon has announced a flurry of new power products as a prelude to PCIM in Nuremberg next week, the latest of which is a family of 600V super-junction mosfets. Its eighth generation, “the devices combine the best features of the 600V CoolMOS 7 series and are the successors to the P7, PFD7, C7, CFD7, G7 and S7 product families”, according ...
Infineon adds bi-directional GaN transistors
Infineon has announced bi-directional GaN power transistors at 40, 650 and 850V, and a current sensing GaN transistor. There are two types of bi-directional transistor: The 650 and 850V devices are both normally-off monolithic gate-injection transistors with four operational modes via two separate gates and a substrate terminal, to deliver what the company calls ‘independent isolated control’. “They utilize the ...